GRIFFONI, ALESSIO
 Distribuzione geografica
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Continente #
NA - Nord America 5.485
EU - Europa 1.297
AS - Asia 116
OC - Oceania 4
Totale 6.902
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Nazione #
US - Stati Uniti d'America 4.839
DE - Germania 660
CA - Canada 646
GB - Regno Unito 510
CN - Cina 66
FI - Finlandia 33
SG - Singapore 33
IT - Italia 30
UA - Ucraina 30
VN - Vietnam 15
SE - Svezia 14
FR - Francia 11
IE - Irlanda 4
AU - Australia 3
BE - Belgio 1
BG - Bulgaria 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
IN - India 1
NZ - Nuova Zelanda 1
RU - Federazione Russa 1
TH - Thailandia 1
Totale 6.902
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Città #
Montréal 644
Munich 630
Mcallen 538
Fairfield 226
Woodbridge 188
Jacksonville 158
Houston 131
Ann Arbor 110
Wilmington 89
Ashburn 87
Seattle 81
Cambridge 79
Chandler 77
Princeton 31
San Diego 23
Singapore 22
Medford 17
Roxbury 17
Dong Ket 15
Des Moines 13
Nanjing 13
Boardman 10
Helsinki 10
Hebei 9
Guangzhou 8
Beijing 6
Cagliari 6
Mestre 6
Shenyang 6
Nanchang 4
Changsha 3
Dublin 3
Indiana 3
Leawood 3
London 3
Norwalk 3
Rome 3
Santa Clara 3
Shanghai 3
Sydney 3
Tianjin 3
Jiaxing 2
Marseille 2
Monza 2
Ocoee 2
Padova 2
Redwood City 2
Acton 1
Bari 1
Borås 1
Buffalo 1
Chiswick 1
Düsseldorf 1
Hangzhou 1
Harbin 1
Hounslow 1
Islington 1
Jinan 1
Kharkiv 1
Kilburn 1
Los Angeles 1
Monmouth Junction 1
Moscow 1
Nakhon Ratchasima 1
Naples 1
New Bedfont 1
New York 1
Nuremberg 1
Palmerston North 1
Rathcormack 1
Roorkee 1
Sofia 1
Tettnang 1
Toronto 1
Tubize 1
Totale 3.327
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.617
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.370
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.019
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 721
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 653
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 175
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 148
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 143
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 143
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 95
Impact of Strain on ESD Robustness of FinFET Devices 95
ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies 82
Impact of radiation on the operation and reliability of deep submicron CMOS 77
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 77
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 74
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 72
Multi-gate devices for the 32-nm node and beyond: advantages and issues 65
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 64
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 49
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs2009 European Conference on Radiation and Its Effects on Components and Systems 39
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices 39
On-Wafer Human Metal Model Measurements for System-Level ESD Analysis on Component Level 37
Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology 32
Impact of radiation on the operation and reliability of deep submicron CMOS 23
Totale 6.909
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Categoria #
all - tutte 11.457
article - articoli 3.211
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.668
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020663 0 0 0 217 93 56 60 94 84 26 15 18
2020/2021287 12 23 14 18 18 31 11 32 39 24 40 25
2021/2022237 0 31 39 6 7 12 3 21 17 8 42 51
2022/2023211 36 2 2 20 42 42 1 22 28 1 10 5
2023/2024101 11 20 7 11 3 5 2 10 0 5 11 16
2024/20252.862 2.581 264 13 4 0 0 0 0 0 0 0 0
Totale 6.909