GRIFFONI, ALESSIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.646
EU - Europa 1.284
AS - Asia 80
OC - Oceania 3
Totale 4.013
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Nazione #
US - Stati Uniti d'America 2.000
DE - Germania 658
CA - Canada 646
GB - Regno Unito 510
CN - Cina 64
FI - Finlandia 33
IT - Italia 30
UA - Ucraina 30
VN - Vietnam 15
SE - Svezia 14
AU - Australia 3
IE - Irlanda 3
FR - Francia 2
BE - Belgio 1
BG - Bulgaria 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
IN - India 1
Totale 4.013
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Città #
Montréal 644
Munich 630
Mcallen 538
Fairfield 226
Woodbridge 188
Jacksonville 158
Houston 131
Ann Arbor 110
Wilmington 89
Ashburn 87
Seattle 81
Cambridge 79
Chandler 77
Princeton 31
San Diego 23
Medford 17
Roxbury 17
Dong Ket 15
Des Moines 13
Nanjing 13
Boardman 10
Helsinki 10
Hebei 9
Guangzhou 8
Cagliari 6
Mestre 6
Shenyang 6
Beijing 5
Nanchang 4
Changsha 3
Dublin 3
Indiana 3
Leawood 3
London 3
Norwalk 3
Rome 3
Shanghai 3
Sydney 3
Tianjin 3
Jiaxing 2
Marseille 2
Monza 2
Ocoee 2
Padova 2
Redwood City 2
Acton 1
Bari 1
Borås 1
Buffalo 1
Chiswick 1
Hangzhou 1
Hounslow 1
Islington 1
Jinan 1
Kharkiv 1
Kilburn 1
Monmouth Junction 1
Naples 1
New Bedfont 1
New York 1
Roorkee 1
Sofia 1
Tettnang 1
Toronto 1
Tubize 1
Totale 3.293
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Nome #
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.368
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.014
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 173
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 146
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 142
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 142
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 92
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 90
Impact of Strain on ESD Robustness of FinFET Devices 90
Impact of radiation on the operation and reliability of deep submicron CMOS 76
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 75
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 72
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 71
ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies 71
Multi-gate devices for the 32-nm node and beyond: advantages and issues 64
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 56
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 47
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 44
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 36
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs2009 European Conference on Radiation and Its Effects on Components and Systems 34
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices 34
On-Wafer Human Metal Model Measurements for System-Level ESD Analysis on Component Level 33
Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology 31
Impact of radiation on the operation and reliability of deep submicron CMOS 19
Totale 4.020
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Categoria #
all - tutte 7.840
article - articoli 2.307
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.147
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019306 0 0 0 0 0 0 0 0 0 0 162 144
2019/20201.002 158 104 77 217 93 56 60 94 84 26 15 18
2020/2021287 12 23 14 18 18 31 11 32 39 24 40 25
2021/2022237 0 31 39 6 7 12 3 21 17 8 42 51
2022/2023211 36 2 2 20 42 42 1 22 28 1 10 5
2023/202474 11 20 7 11 3 5 2 10 0 5 0 0
Totale 4.020