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Mostrati risultati da 1 a 20 di 78
Titolo Data di pubblicazione Autore(i) Rivista Serie Titolo libro
Reliability of Commercial UVC LEDs: 2022 State-of-the-Art 2022 Trivellin N.Fiorimonte D.Piva F.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. ELECTRONICS - -
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 2022 Nardo, Ariannade Santi, CarloCarraro, C.Sgarbossa, FrancescoBuffolo, M.Gasparotto, A.Napolitani, EnricoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate 2022 Buffolo M.Zenari M.Santi C. D.Meneghesso G.Zanoni E.Meneghini M. + IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS - -
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 2022 Buffolo M.Caria A.Piva F.Roccato N.Casu C.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs 2021 Mukherjee K.De Santi C.Buffolo M.Gerosa A.Meneghesso G.Zanoni E.Meneghini M. + MICROMACHINES - -
Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications 2021 Zenari M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics 2021 Buffolo, MatteoDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + MATERIALS - -
A review of the reliability of integrated ir laser diodes for silicon photonics 2021 Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations 2021 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE - The International Society for Optical Engineering Volume 11686
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile 2021 Piva F.De Santi C.Caria A.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 2021 Roccato N.Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Dynamic performance characterization techniques in gallium nitride-based electronic devices 2021 De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. CRYSTALS - -
Uv-based technologies for sars-cov2 inactivation: Status and perspectives 2021 Trivellin N.Piva F.Fiorimonte D.Buffolo M.De Santi C.Dughiero F.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 2021 De Santi C.Fabris E.Caria A.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode 2021 Casu C.Buffolo M.Caria A.De Santi C.Zanoni E.Meneghesso G.Meneghini M. MICROELECTRONICS RELIABILITY - -
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 2021 Fregolent M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 2021 Roccato N.Piva F.Santi C. D.Mukherjee K.Buffolo M.Verzellesi G.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 2021 Fregolent M.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF APPLIED PHYSICS - -
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact 2021 Bertoncello M.Barbato M.Caria A.Buffolo M.De Santi C.Vogrig D.Meneghesso G.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Full Optical Contactless Thermometry Based on LED Photoluminescence 2021 Trivellin N.Buffolo M.De Santi C.Meneghini M.Forzan M.Dughiero F.Zanoni E.Meneghesso G. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT - -
Mostrati risultati da 1 a 20 di 78
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