MENEGHESSO, GAUDENZIO

MENEGHESSO, GAUDENZIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2014 44th European Solid State Device Research Conference (ESSDERC) 2014 MENEGHESSO, GAUDENZIO + - PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE 2014 44th European Solid State Device Research Conference (ESSDERC)
Chip-Level Degradation of InGaN-Based Optoelectronic Devices 2017 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni - - Solid State Lighting Reliability Part 2: Components to Systems
Circuito con DiodiRaddrizzatore a semionda di precisione 2011 MENEGHESSO, GAUDENZIOSPIAZZI, GIORGIO - - ELETTRONICA ANALOGICA prove svolte con approfondimenti
Current collapse associated with surface states in GaN based HEMT's. Theoretical / experimental investigations 2004 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Simulation of Semiconductor Processes and Devices 2004
Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs 2021 De Santi C.Caria A.Piva F.Meneghesso G.Zanoni E.Meneghini M. - - Reliability of Semiconductor Lasers and Optoelectronic Devices
Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs 2017 Meneghini, M.Meneghesso, G.Zanoni, E. - - Topics in Applied Physics - III-Nitride Based Light Emitting Diodes and Applications
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications 2013 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Topics in Applied Physics III-Nitride Based Light Emitting Diodes and Applications
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT's by means of InP etch-stop layer 1998 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chapter 1, pp. 21-30, 1999. Presented t 25th International Symposium on Compound Semiconductor, ISCS’98
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT’s by means of InP etch-stop layer 1999 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chap.1
ESD in Smart Power Processes 2006 MENEGHESSO, GAUDENZIO + - - Analog Circuit Design: Fractional-N Synthesizers, Design for Robustness, Line and Bus Drivers
ESD Sensitivity of GaN-Based Electronic Devices 2015 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOZANONI, ENRICO - - Electrostatic Discharge Protection Advances and Applications
Impact Ionization in Compound Semiconductor Devices 2001 ZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Handbook of Advanced Electronic and Photonic Materials and Devices
Optical Stress and Reliability Study of Ruthenium-based Dye-Sensitized Solar Cells (DSSC) 2011 CESTER, ANDREAMENEGHESSO, GAUDENZIO + - - Proceedings of IEEE International Reliability Physics Symposium
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 2018 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni + - - Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications
Recent results on the physical origin of the degradation of GaN-based LEDs and lasers 2011 MENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - SPIE Proceedings Vol. 7939, Gallium Nitride Materials and Devices
Reliability Issue in Compound Semiconductor Heterojunction Devices 1998 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Compound Semiconductors 1998: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors Held in Nara, Japan
Reliability Issue in Compound Semiconductor Heterojunction Devices 1999 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chapter 1
Reliability issues due to hot-electron effects in GaAs-based MESFETs and HEMTs 1994 ZANONI, ENRICONEVIANI, ANDREAMENEGHESSO, GAUDENZIO + - - Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
Reliability of GaN-Based Power Devices 2018 G. MeneghessoE. ZanoniM. MeneghiniM. RuzzarinI. Rossetto - - Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion