TAZZOLI, AUGUSTO

TAZZOLI, AUGUSTO  

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Risultati 1 - 20 di 96 (tempo di esecuzione: 0.027 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Reliability of RF-MEMS 2005 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 2005 LEVADA, SIMONEMENEGHINI, MATTEOTAZZOLI, AUGUSTOBUSO, SIMONESPIAZZI, GIORGIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Resistive RF-MEMS Switches Characterization and Reliability 2005 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 2005 CESTER, ANDREAGERARDIN, SIMONETAZZOLI, AUGUSTOPACCAGNELLA, ALESSANDROZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - 2005 IEEE International Reliability Physics Symposium Proceedings
A novel fast and versatile temperature measurement system for LDMOS transistors 2005 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Analysis of triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices 2006 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - -
Transmission line pulse (TLP) testing of radio frequency (RF) micro-machined micro-electromechanical systems (MEMS) switches 2006 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Reliability issues in RF-MEMS switches submitted to cycling and ESD test 2006 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Development of ESD protection structures for BULK and SOI BCD6 technology 2006 TAZZOLI, AUGUSTOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IEEE Proceedings of the 18th International Symposium on Power Semiconductor Devices and Integrated Circuits
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 2006 CESTER, ANDREAGERARDIN, SIMONETAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Characterization Issues and ESD Sensitivity of RF-MEMS Switches 2006 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
CDM circuit simulation of a HV Operational Amplifier realized in 0.35μm Smart Power technology 2007 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - -
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 2007 GERARDIN, SIMONEGRIFFONI, ALESSIOTAZZOLI, AUGUSTOCESTER, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO - - 44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007
RF-MEMS Switches Reliability for Long Term Spatial Applications 2007 TAZZOLI, AUGUSTOPERETTI, VANNICELLERE, GIORGIOMENEGHESSO, GAUDENZIO - - -
Degradation of GaN HEMT at high drain voltages 2007 MENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCOZANONI, ENRICO + - - -
Long Term Actuation Issues of Ohmic RF-MEMS Switches 2007 TAZZOLI, AUGUSTOPERETTI, VANNIMENEGHESSO, GAUDENZIO - - -
ESD Robustness of AlGaN/GaN HEMT Devices 2007 TAZZOLI, AUGUSTODANESIN, FRANCESCAZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 2007 TAZZOLI, AUGUSTODANESIN, FRANCESCARAMPAZZO, FABIANAZANON, FRANCOMENEGHESSO, GAUDENZIO + - - -