BUFFOLO, MATTEO

BUFFOLO, MATTEO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A review of the reliability of integrated ir laser diodes for silicon photonics 2021 Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 2016 ZANONI, ENRICOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIODE SANTI, CARLOLA GRASSA, MARCOBUFFOLO, MATTEOTRIVELLIN, NICOLAMONTI, DESIREE - - Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Analysis and design of SARS-CoV-2 disinfection chambers based on UVC LEDs 2022 Trivellin, NBuffolo, MBarbato, MDel Vecchio, CDughiero, FZanoni, EMeneghesso, GCrisanti, AMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 2022 F. PivaN. RoccatoM. BuffoloC. De SantiM. PilatiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study 2022 Zenari, MBuffolo, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 11990, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 2015 DE SANTI, CARLODAL LAGO, MATTEOBUFFOLO, MATTEOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry, RTSI 2015 - Proceedings
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 2020 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 2021 Mukherjee K.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MATERIALS - -
Challenges for highly reliable GaN-based LEDs 2019 Zanoni E.De Santi C.Trivellin N.Renso N.Buffolo M.Monti D.Caria A.Piva F.Meneghesso G.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Characterization and Modeling of quantum efficiency InGaN-GaN Multi-Quantum Well (MQW) solar cells 2022 M. NicolettoA. CariaC. De SantiM. BuffoloG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of WOCSDICE-EXMATEC 2022, Ponta Delgada, Azores, Portugal
Current crowding as a major cause for InGaN LED degradation at extreme high current density 2021 Trivellin N.Buffolo M.De Santi C.Zanoni E.Meneghesso G.Meneghini M. - - IECON Proceedings (Industrial Electronics Conference)
Current induced degradation study on state of the art DUV LEDs 2018 Trivellin, N.Monti, D.De Santi, C.Buffolo, M.Meneghesso, G.Zanoni, E.Meneghini, M. MICROELECTRONICS RELIABILITY - -
Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations 2021 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE - The International Society for Optical Engineering Volume 11686
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 2022 Roccato, NPiva, FDe Santi, CBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 2021 Fregolent M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 2022 De Santi, CFregolent, MBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12002, Oxide-based Materials and Devices XIII
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes 2018 Buffolo, MatteoMeneghini, MatteoDe Santi, CarloTrivellin, NicolaMeneghesso, GaudenzioZanoni, Enrico + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 2022 Buffolo M.Caria A.Piva F.Roccato N.Casu C.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 2022 Buffolo, MRoccato, NPiva, FDe Santi, CCasu, CCaria, AMukherjee, KMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI