BUFFOLO, MATTEO
BUFFOLO, MATTEO
Dipartimento di Ingegneria dell'Informazione - DEI
A review of the reliability of integrated ir laser diodes for silicon photonics
2021 Buffolo, M.; De Santi, C.; Norman, J.; Shang, C.; Bowers, J. E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components
2016 Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; DE SANTI, Carlo; LA GRASSA, Marco; Buffolo, Matteo; Trivellin, Nicola; Monti, Desiree
Analysis and design of SARS-CoV-2 disinfection chambers based on UVC LEDs
2022 Trivellin, N; Buffolo, M; Onelia, F; Pizzolato, A; Barbato, M; Orlandi, Vt; Del Vecchio, C; Dughiero, F; Zanoni, E; Meneghesso, G; Crisanti, A; Meneghini, M
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements
2022 Piva, F.; Roccato, N.; Buffolo, M.; De Santi, C.; Pilati, M.; Susilo, N.; Guttmann, M.; Sulmoni, L.; Wernicke, T.; Kneissl, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study
2022 Zenari, M; Buffolo, M; De Santi, C; Norman, J; Meneghesso, G; Bowers, Je; Zanoni, E; Meneghini, M
Analysis of the mechanisms limiting the reliability of retrofit LED lamps
2015 DE SANTI, Carlo; DAL LAGO, Matteo; Buffolo, Matteo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation
2020 De Santi, C.; Fregolent, M.; Buffolo, M.; Wong, M. H.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization
2021 Mukherjee, K.; De Santi, C.; Borga, M.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Diehle, P.; Hubner, S.; Altmann, F.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Challenges for highly reliable GaN-based LEDs
2019 Zanoni, E.; De Santi, C.; Trivellin, N.; Renso, N.; Buffolo, M.; Monti, D.; Caria, A.; Piva, F.; Meneghesso, G.; Meneghini, M.
Characterization and Modeling of quantum efficiency InGaN-GaN Multi-Quantum Well (MQW) solar cells
2022 Nicoletto, M.; Caria, A.; De Santi, C.; Buffolo, M.; Huang, X.; Fu, H.; Chen, H.; Zhao, Y.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Current crowding as a major cause for InGaN LED degradation at extreme high current density
2021 Trivellin, N.; Buffolo, M.; De Santi, C.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Current induced degradation study on state of the art DUV LEDs
2018 Trivellin, N.; Monti, D.; De Santi, C.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations
2021 Piva, F.; De Santi, C.; Buffolo, M.; Deki, M.; Kushimoto, M.; Amano, H.; Tomozawa, H.; Shibata, N.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics
2022 Roccato, N; Piva, F; De Santi, C; Brescancin, R; Mukherjee, K; Buffolo, M; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Meneghesso, G; Zanoni, E; Meneghini, M
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
2021 Fregolent, M.; Buffolo, M.; De Santi, C.; Hasegawa, S.; Matsumura, J.; Nishinaka, H.; Yoshimoto, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes
2022 De Santi, C; Fregolent, M; Buffolo, M; Higashiwaki, M; Meneghesso, G; Zanoni, E; Meneghini, M
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes
2018 Buffolo, Matteo; Meneghini, Matteo; De Santi, Carlo; Trivellin, Nicola; Davenport, Michael L.; Bowers, John E.; Meneghesso, Gaudenzio; Zanoni, Enrico
Defects and Reliability of GaN-Based LEDs: Review and Perspectives
2022 Buffolo, M.; Caria, A.; Piva, F.; Roccato, N.; Casu, C.; De Santi, C.; Trivellin, N.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
2022 Buffolo, M; Roccato, N; Piva, F; De Santi, C; Brescancin, R; Casu, C; Caria, A; Mukherjee, K; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Mosca, M; Meneghesso, G; Zanoni, E; Meneghini, M