BUFFOLO, MATTEO
BUFFOLO, MATTEO
Dipartimento di Ingegneria dell'Informazione - DEI
A review of the reliability of integrated ir laser diodes for silicon photonics
2021 Buffolo, M.; De Santi, C.; Norman, J.; Shang, C.; Bowers, J. E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation
2020 De Santi, C.; Fregolent, M.; Buffolo, M.; Wong, M. H.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization
2021 Mukherjee, K.; De Santi, C.; Borga, M.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Diehle, P.; Hubner, S.; Altmann, F.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Current induced degradation study on state of the art DUV LEDs
2018 Trivellin, N.; Monti, D.; De Santi, C.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
2021 Fregolent, M.; Buffolo, M.; De Santi, C.; Hasegawa, S.; Matsumura, J.; Nishinaka, H.; Yoshimoto, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Defects and Reliability of GaN-Based LEDs: Review and Perspectives
2022 Buffolo, M.; Caria, A.; Piva, F.; Roccato, N.; Casu, C.; De Santi, C.; Trivellin, N.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements
2020 Piva, F.; De Santi, C.; Buffolo, M.; Taffarel, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate
2021 Zenari, M.; Buffolo, M.; De Santi, C.; Norman, J.; Herrick, R. W.; Meneghesso, G.; Zanoni, E.; Bowers, J.; Meneghini, M.
Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- μm DBR Laser Diodes
2017 Buffolo, Matteo; Meneghini, Matteo; De Santi, Carlo; Davenport, Michael L.; Bowers, John E.; Meneghesso, Gaudenzio; Zanoni, Enrico
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits
2018 Buffolo, M.; Pietrobon, Marika; De Santi, C.; Samparisi, Fabio; Davenport, M. L.; Bowers, J. E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers
2020 Buffolo, M.; Rovere, L.; De Santi, C.; Jung, D.; Norman, J.; Bowers, J. E.; Herrick, R. W.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence
2019 Trivellin, N.; Monti, D.; Piva, F.; Buffolo, M.; De Santi, C.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Dynamic performance characterization techniques in gallium nitride-based electronic devices
2021 De Santi, C.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode
2021 Casu, C.; Buffolo, M.; Caria, A.; De Santi, C.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
2021 Roccato, N.; Piva, F.; De Santi, C.; Buffolo, M.; Haller, C.; Carlin, J. -F.; Grandjean, N.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress
2020 Buffolo, M.; Davanzo, E.; De Santi, C.; Trivellin, N.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
2021 Bertoncello, M.; Barbato, M.; Caria, A.; Buffolo, M.; De Santi, C.; Rampino, S.; Vogrig, D.; Meneghesso, G.; Meneghini, M.
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs
2019 DE SANTI, Carlo; Buffolo, Matteo; Renso, Nicola; Neviani, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes
2016 DE SANTI, Carlo; Meneghini, Matteo; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico