BUFFOLO, MATTEO

BUFFOLO, MATTEO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 46 (tempo di esecuzione: 0.039 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 2020 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 2021 Mukherjee K.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MATERIALS - -
Current induced degradation study on state of the art DUV LEDs 2018 Trivellin, N.Monti, D.De Santi, C.Buffolo, M.Meneghesso, G.Zanoni, E.Meneghini, M. MICROELECTRONICS RELIABILITY - -
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 2021 Fregolent M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 2022 Buffolo M.Caria A.Piva F.Roccato N.Casu C.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements 2020 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate 2021 Zenari M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- μm DBR Laser Diodes 2017 Buffolo, MatteoMeneghini, MatteoDe Santi, CarloMeneghesso, GaudenzioZanoni, Enrico + IEEE JOURNAL OF QUANTUM ELECTRONICS - -
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits 2018 Buffolo, M.PIETROBON, MARIKADe Santi, C.SAMPARISI, FABIOMeneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -
Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers 2020 Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE JOURNAL OF QUANTUM ELECTRONICS - -
Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence 2019 Trivellin N.Monti D.Piva F.Buffolo M.De Santi C.Zanoni E.Meneghesso G.Meneghini M. JAPANESE JOURNAL OF APPLIED PHYSICS - -
Dynamic performance characterization techniques in gallium nitride-based electronic devices 2021 De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. CRYSTALS - -
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode 2021 Casu C.Buffolo M.Caria A.De Santi C.Zanoni E.Meneghesso G.Meneghini M. MICROELECTRONICS RELIABILITY - -
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 2021 Roccato N.Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress 2020 Buffolo, M.De Santi, C.Trivellin, N.Meneghesso, G.Zanoni, E.Meneghini, M. + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact 2021 Bertoncello M.Barbato M.Caria A.Buffolo M.De Santi C.Vogrig D.Meneghesso G.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 2019 Carlo De SantiMatteo BuffoloNicola RensoAndrea NevianiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini APPLIED PHYSICS EXPRESS - -
Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes 2016 DE SANTI, CARLOMENEGHINI, MATTEOBUFFOLO, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO IEEE ELECTRON DEVICE LETTERS - -
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 2016 BUFFOLO, MATTEOMENEGHINI, MATTEODE SANTI, CARLOFELBER, HENRYRENSO, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Failure causes and mechanisms of retrofit LED lamps 2015 DE SANTI, CARLODAL LAGO, MATTEOBUFFOLO, MATTEOMONTI, DESIREEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -