MENEGHESSO, GAUDENZIO
 Distribuzione geografica
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Continente #
NA - Nord America 71.761
EU - Europa 12.664
AS - Asia 11.381
SA - Sud America 526
AF - Africa 111
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 24
Totale 96.496
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Nazione #
US - Stati Uniti d'America 70.840
SG - Singapore 5.153
CN - Cina 3.959
IT - Italia 3.049
DE - Germania 2.161
IE - Irlanda 1.582
FI - Finlandia 1.522
GB - Regno Unito 1.122
CA - Canada 885
HK - Hong Kong 717
FR - Francia 691
UA - Ucraina 675
SE - Svezia 616
RU - Federazione Russa 615
BR - Brasile 469
VN - Vietnam 460
IN - India 345
TW - Taiwan 213
KR - Corea 190
JP - Giappone 177
NL - Olanda 164
AT - Austria 142
CI - Costa d'Avorio 81
BE - Belgio 75
CH - Svizzera 59
GR - Grecia 37
TR - Turchia 34
MX - Messico 28
ES - Italia 24
LT - Lituania 22
EU - Europa 21
AR - Argentina 19
BD - Bangladesh 18
AU - Australia 17
EC - Ecuador 17
PL - Polonia 17
RO - Romania 17
MY - Malesia 16
ID - Indonesia 13
IQ - Iraq 13
SA - Arabia Saudita 13
HU - Ungheria 11
IL - Israele 11
MA - Marocco 11
BG - Bulgaria 10
IR - Iran 10
CL - Cile 8
A2 - ???statistics.table.value.countryCode.A2??? 7
NO - Norvegia 7
NZ - Nuova Zelanda 7
DK - Danimarca 6
NP - Nepal 6
PT - Portogallo 6
RS - Serbia 6
ZA - Sudafrica 6
CO - Colombia 5
CY - Cipro 5
DZ - Algeria 5
MD - Moldavia 5
PK - Pakistan 5
CZ - Repubblica Ceca 4
EE - Estonia 4
KZ - Kazakistan 4
VE - Venezuela 4
BY - Bielorussia 3
HR - Croazia 3
AZ - Azerbaigian 2
EG - Egitto 2
HN - Honduras 2
JO - Giordania 2
KE - Kenya 2
MO - Macao, regione amministrativa speciale della Cina 2
OM - Oman 2
PA - Panama 2
PY - Paraguay 2
SI - Slovenia 2
TH - Thailandia 2
TN - Tunisia 2
UZ - Uzbekistan 2
AF - Afghanistan, Repubblica islamica di 1
AO - Angola 1
AP - ???statistics.table.value.countryCode.AP??? 1
BH - Bahrain 1
BN - Brunei Darussalam 1
DO - Repubblica Dominicana 1
GT - Guatemala 1
IM - Isola di Man 1
IS - Islanda 1
JM - Giamaica 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
ME - Montenegro 1
MK - Macedonia 1
NG - Nigeria 1
PE - Perù 1
PH - Filippine 1
QA - Qatar 1
SK - Slovacchia (Repubblica Slovacca) 1
SM - San Marino 1
Totale 96.494
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Città #
Fairfield 10.284
Woodbridge 7.964
Houston 6.161
Ann Arbor 5.370
Ashburn 4.636
Seattle 3.868
Wilmington 3.532
Chandler 3.441
Cambridge 3.403
Jacksonville 2.901
Santa Clara 2.537
Singapore 2.419
Boardman 1.718
Dublin 1.573
Princeton 1.274
Padova 1.055
Beijing 999
Medford 927
Munich 925
San Diego 900
Montréal 783
Des Moines 778
Helsinki 668
Mcallen 648
Hong Kong 638
Nanjing 595
Dong Ket 443
Roxbury 356
Guangzhou 241
Leesburg 208
New York 188
Shenyang 172
Riese Pio X 166
Hebei 162
Nanchang 157
Norwalk 139
London 137
Jiaxing 129
Milan 111
Shanghai 106
Changsha 105
Nuremberg 101
Tianjin 96
Washington 96
Bengaluru 94
Los Angeles 86
Indiana 82
Abidjan 81
Redwood City 80
Pune 76
Falkenstein 71
Jinan 60
Vienna 59
Amsterdam 51
Kharkiv 51
Rome 50
São Paulo 47
Zhengzhou 47
Dallas 46
Hsinchu 46
Tokyo 46
Frankfurt am Main 44
Tappahannock 43
Borås 41
Scorzè 41
Taipei 39
Ogden 38
Lappeenranta 37
Kilburn 36
Brussels 35
Chicago 35
Mumbai 34
Berlin 32
Turin 29
Toronto 28
Hangzhou 27
Central 25
Mestre 25
Taichung 25
Zurich 25
Lyon 24
San Francisco 24
Venice 23
Bologna 22
Grenoble 22
Palermo 22
Pignone 21
Chiswick 20
Ningbo 20
Phoenix 20
Rockville 20
Treviso 20
Cagliari 19
Hounslow 19
Prescot 19
Vicenza 19
Arzignano 18
Falls Church 18
New Delhi 18
Seoul 18
Totale 75.228
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.626
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.379
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.024
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 730
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 665
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 520
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 516
Three terminal Breakdown evaluation in GaN-HEMT 497
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 298
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 276
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 255
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 220
Accelerated testing of RF-MEMS contact degradation through radiation sources 195
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 191
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 187
A review of failure modes and mechanisms of GaN-based HEMT's 185
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 181
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 179
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 170
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 167
Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena 165
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 165
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 165
2.1 A/mm current density AlGaN/GaN HEMT 164
Analysis of hot carrier aging degradation in GaN MESFETs 163
Failure modes and mechanisms of DC-aged GaN LEDs 162
Analysis of the role of current in the degradation of InGaN-based laser diodes 162
Accelerated life test of high brightness light emitting diodes 161
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 160
Alternative MOS Devices for the Manufacture of High-Density ICs 158
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 158
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 158
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 156
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 156
Anomalous Kink Effect in GaN High Electron Mobility Transistors 156
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 156
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 156
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 154
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 153
Defect-related degradation of Deep-UV-LEDs 153
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 153
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 153
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 153
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 153
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 151
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 151
A novel fast and versatile temperature measurement system for LDMOS transistors 151
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 151
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 151
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 151
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 151
Adaptive multi-wavelength LED star simulator for space life studies 151
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 151
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 150
ESD characterization of multi-chip RGB LEDs 150
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 150
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 148
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 147
Reliability of visible GaN LEDs in plastic package 147
A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability 147
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application 146
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 146
Influence of device self-heating on trap activation energy extraction 146
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 145
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 145
Guest Editorial Special Issue on GaN Electronic Devices 145
A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches 145
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 144
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 143
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 143
Reliability analysis of InGaN Blu-Ray laser diode 142
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 142
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 142
"Hot-plugging" of LED modules: Electrical characterization and device degradation 141
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 141
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 140
Reliability aspects of GaN-HEMTs on composite substrates 139
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 139
A physical-based equivalent circuit model for an organic/electrolyte interface 139
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization 139
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 138
Reliability issues of Gallium Nitride High Electron Mobility Transistors 138
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 138
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 137
Diagnosis of trapping phenomena in GaN MESFETs 137
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 137
Extensive analysis of the degradation of phosphor-converted LEDs 136
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 136
Failure mechanisms of gallium nitride LEDs related with passivation 136
Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells 136
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 136
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs 135
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 135
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 134
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing 133
A Review on the Reliability of GaN-based Laser Diodes 133
Channel temperature measurement of PHEMT by means of optical probes 132
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 132
Positive and negative threshold voltage instabilities in GaN-based transistors 132
Modeling the optical degradation kinetics of UV-C LEDs 131
Totale 21.206
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Categoria #
all - tutte 363.023
article - articoli 175.295
book - libri 186
conference - conferenze 0
curatela - curatele 193
other - altro 0
patent - brevetti 520
selected - selezionate 0
volume - volumi 6.662
Totale 545.879
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.549 0 0 0 0 0 0 0 0 0 1.820 1.031 698
2020/202111.003 641 807 500 812 503 791 747 1.401 1.435 951 1.251 1.164
2021/202212.205 381 1.813 1.726 740 382 541 628 1.243 524 319 1.342 2.566
2022/202310.091 1.900 358 178 867 1.718 1.461 273 847 1.308 130 677 374
2023/20246.790 532 918 726 549 473 888 498 285 238 321 642 720
2024/202518.387 2.719 1.793 1.149 1.345 3.696 1.708 1.323 2.153 1.693 808 0 0
Totale 97.411