MENEGHESSO, GAUDENZIO
 Distribuzione geografica
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Continente #
NA - Nord America 82.320
AS - Asia 32.475
EU - Europa 25.046
AF - Africa 8.658
SA - Sud America 6.433
OC - Oceania 860
Continente sconosciuto - Info sul continente non disponibili 411
Totale 156.203
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Nazione #
US - Stati Uniti d'America 77.176
SG - Singapore 11.518
CN - Cina 5.748
HK - Hong Kong 4.193
IT - Italia 3.838
BR - Brasile 3.651
DE - Germania 2.781
PL - Polonia 2.550
VN - Vietnam 1.976
FI - Finlandia 1.934
IE - Irlanda 1.795
GB - Regno Unito 1.395
CA - Canada 1.042
FR - Francia 977
UA - Ucraina 938
SE - Svezia 896
RU - Federazione Russa 890
IN - India 702
NL - Olanda 628
KR - Corea 501
JP - Giappone 481
AR - Argentina 480
AT - Austria 471
TR - Turchia 422
TW - Taiwan 422
BJ - Benin 412
EC - Ecuador 349
MX - Messico 349
ZA - Sudafrica 328
BE - Belgio 318
ES - Italia 318
IQ - Iraq 316
ID - Indonesia 308
CI - Costa d'Avorio 289
AO - Angola 287
CH - Svizzera 283
CO - Colombia 278
PY - Paraguay 268
SA - Arabia Saudita 266
UZ - Uzbekistan 264
GR - Grecia 256
PA - Panama 255
MA - Marocco 254
VE - Venezuela 252
AL - Albania 249
BB - Barbados 249
MK - Macedonia 244
NI - Nicaragua 243
RS - Serbia 242
UY - Uruguay 242
CL - Cile 241
DO - Repubblica Dominicana 241
JM - Giamaica 240
CV - Capo Verde 238
IL - Israele 238
EE - Estonia 237
JO - Giordania 236
KG - Kirghizistan 236
PE - Perù 236
IR - Iran 235
KZ - Kazakistan 234
EG - Egitto 233
NP - Nepal 231
GT - Guatemala 230
BW - Botswana 229
KE - Kenya 229
CY - Cipro 227
PK - Pakistan 227
SK - Slovacchia (Repubblica Slovacca) 227
CZ - Repubblica Ceca 226
DZ - Algeria 225
HU - Ungheria 224
TN - Tunisia 224
PT - Portogallo 223
MD - Moldavia 222
BO - Bolivia 220
DK - Danimarca 219
HN - Honduras 218
HR - Croazia 218
RO - Romania 218
AZ - Azerbaigian 217
MG - Madagascar 217
SN - Senegal 217
LB - Libano 216
YT - Mayotte 216
CR - Costa Rica 215
GN - Guinea 215
BA - Bosnia-Erzegovina 214
GF - Guiana Francese 214
MZ - Mozambico 214
LA - Repubblica Popolare Democratica del Laos 213
CG - Congo 212
NO - Norvegia 212
TJ - Tagikistan 212
GA - Gabon 211
MY - Malesia 210
TT - Trinidad e Tobago 209
UG - Uganda 209
AE - Emirati Arabi Uniti 208
AU - Australia 208
Totale 145.665
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Città #
Fairfield 10.287
Woodbridge 7.966
Ashburn 6.457
Houston 6.178
Singapore 6.089
Ann Arbor 5.373
Hong Kong 3.947
Seattle 3.894
Wilmington 3.560
Chandler 3.441
Cambridge 3.408
Jacksonville 2.905
Santa Clara 2.645
Bytom 2.210
Beijing 1.810
Boardman 1.737
Dublin 1.705
Munich 1.385
Princeton 1.274
Padova 1.082
Medford 927
San Diego 904
Montréal 783
Des Moines 778
Helsinki 760
Los Angeles 664
Mcallen 648
Nanjing 597
Ho Chi Minh City 576
Dong Ket 443
Chicago 399
Cotonou 393
New York 361
Roxbury 356
São Paulo 320
Hanoi 318
Vienna 286
Abidjan 274
Buffalo 257
Hefei 257
Guangzhou 248
Tashkent 236
Luanda 234
Managua 233
Panama City 232
Amman 225
Padua 220
Bridgetown 218
Dakar 210
Leesburg 208
Bishkek 207
Conakry 205
Libreville 204
Montevideo 202
Kampala 201
Baku 199
Castries 198
Nairobi 198
Antananarivo 197
London 197
Praia 195
Dushanbe 194
Turku 193
Ulan Bator 192
Lusaka 188
Phnom Penh 188
Bamako 187
Nouakchott 186
Kigali 185
Accra 183
Milan 182
Tokyo 182
Nuremberg 179
Vientiane 179
Havana 178
Shenyang 176
Harare 175
Tallinn 173
Andorra la Vella 172
Djibouti 169
Maputo 167
San José 167
Warsaw 167
Podgorica 166
Riese Pio X 166
Nassau 165
Salt Lake City 164
Yerevan 163
Hebei 162
Willemstad 162
Gaborone 160
Nanchang 158
Riga 158
Cayenne 156
Kingston 156
Noumea 156
Redondo Beach 154
Dar es Salaam 153
Addis Ababa 151
Reykjavik 147
Totale 98.780
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.659
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.420
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.063
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 768
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 701
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 580
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 568
Three terminal Breakdown evaluation in GaN-HEMT 530
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 376
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 369
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 311
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 268
A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability 259
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 251
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 251
Accelerated testing of RF-MEMS contact degradation through radiation sources 250
A review of failure modes and mechanisms of GaN-based HEMT's 231
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 231
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 225
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 224
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 221
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 220
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 218
Analysis of hot carrier aging degradation in GaN MESFETs 217
Accelerated life test of high brightness light emitting diodes 216
2.1 A/mm current density AlGaN/GaN HEMT 216
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 215
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 214
ESD characterization of multi-chip RGB LEDs 213
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 213
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 212
A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches 212
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 210
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 209
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 209
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 209
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 209
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 209
Analysis of the role of current in the degradation of InGaN-based laser diodes 207
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 207
Adaptive multi-wavelength LED star simulator for space life studies 207
Failure modes and mechanisms of DC-aged GaN LEDs 206
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 206
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 206
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 205
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 204
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 204
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization 204
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 203
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 201
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 200
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 200
Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells 200
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 199
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 199
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 199
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 198
A physical-based equivalent circuit model for an organic/electrolyte interface 198
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 198
Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena 196
Alternative MOS Devices for the Manufacture of High-Density ICs 196
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 196
Degradation physics of GaN-based lateral and vertical devices 196
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 196
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 195
Reliability aspects of GaN-HEMTs on composite substrates 194
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 194
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 194
Diagnosis of trapping phenomena in GaN MESFETs 194
Failure mechanisms of gallium nitride LEDs related with passivation 194
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 194
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 193
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 193
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 192
Defect-related degradation of Deep-UV-LEDs 192
Influence of device self-heating on trap activation energy extraction 191
Anomalous Kink Effect in GaN High Electron Mobility Transistors 190
A novel fast and versatile temperature measurement system for LDMOS transistors 188
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 188
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells 187
Reliability of visible GaN LEDs in plastic package 187
Reliability analysis of InGaN Blu-Ray laser diode 186
Reliability issues of Gallium Nitride High Electron Mobility Transistors 186
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 186
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 186
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 186
Guest Editorial Special Issue on GaN Electronic Devices 185
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 185
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 185
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 185
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 184
Modeling the optical degradation kinetics of UV-C LEDs 182
"Hot-plugging" of LED modules: Electrical characterization and device degradation 182
Coupling halide perovskites with different materials: From doping to nanocomposites, beyond photovoltaics 182
Extensive analysis of the degradation of phosphor-converted LEDs 181
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 181
Low frequency noise characterization of the GaN LEDs 181
A Review on the Reliability of GaN-based Laser Diodes 181
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 180
Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels 180
Totale 26.352
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Categoria #
all - tutte 473.083
article - articoli 225.213
book - libri 271
conference - conferenze 0
curatela - curatele 283
other - altro 0
patent - brevetti 716
selected - selezionate 0
volume - volumi 8.587
Totale 708.153
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20218.243 0 0 0 0 503 791 747 1.401 1.435 951 1.251 1.164
2021/202212.205 381 1.813 1.726 740 382 541 628 1.243 524 319 1.342 2.566
2022/202310.091 1.900 358 178 867 1.718 1.461 273 847 1.308 130 677 374
2023/20246.790 532 918 726 549 473 888 498 285 238 321 642 720
2024/202530.182 2.719 1.793 1.149 1.345 3.696 1.708 1.323 2.153 1.693 898 4.833 6.872
2025/202647.988 3.714 8.466 14.776 16.066 4.966 0 0 0 0 0 0 0
Totale 157.194