MENEGHESSO, GAUDENZIO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 67.009
EU - Europa 10.324
AS - Asia 6.279
SA - Sud America 42
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 22
AF - Africa 12
Totale 83.717
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 66.151
CN - Cina 3.050
IT - Italia 2.320
SG - Singapore 1.939
DE - Germania 1.663
IE - Irlanda 1.568
FI - Finlandia 1.406
GB - Regno Unito 1.079
CA - Canada 843
UA - Ucraina 666
FR - Francia 635
SE - Svezia 603
VN - Vietnam 455
IN - India 254
JP - Giappone 141
TW - Taiwan 138
KR - Corea 134
NL - Olanda 82
HK - Hong Kong 75
BE - Belgio 48
CH - Svizzera 43
RU - Federazione Russa 42
GR - Grecia 35
AT - Austria 25
EU - Europa 21
BR - Brasile 20
RO - Romania 17
TR - Turchia 17
ES - Italia 16
AU - Australia 15
PL - Polonia 15
ID - Indonesia 13
MX - Messico 13
EC - Ecuador 12
SA - Arabia Saudita 11
IL - Israele 10
BG - Bulgaria 9
MY - Malesia 9
LT - Lituania 8
A2 - ???statistics.table.value.countryCode.A2??? 7
IR - Iran 7
NZ - Nuova Zelanda 7
BD - Bangladesh 6
DK - Danimarca 6
NO - Norvegia 6
AR - Argentina 5
MA - Marocco 5
MD - Moldavia 5
PT - Portogallo 5
RS - Serbia 5
CY - Cipro 4
CL - Cile 3
DZ - Algeria 3
EE - Estonia 3
HR - Croazia 3
IQ - Iraq 3
NP - Nepal 3
CZ - Repubblica Ceca 2
KZ - Kazakistan 2
SI - Slovenia 2
TH - Thailandia 2
AF - Afghanistan, Repubblica islamica di 1
AP - ???statistics.table.value.countryCode.AP??? 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CO - Colombia 1
DO - Repubblica Dominicana 1
EG - Egitto 1
HU - Ungheria 1
IM - Isola di Man 1
IS - Islanda 1
KE - Kenya 1
ME - Montenegro 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NG - Nigeria 1
OM - Oman 1
PA - Panama 1
PH - Filippine 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
ZA - Sudafrica 1
Totale 83.717
Salva come PNG Salva come JPEG
Città #
Fairfield 10.284
Woodbridge 7.964
Houston 6.161
Ann Arbor 5.368
Ashburn 4.604
Seattle 3.863
Wilmington 3.532
Chandler 3.441
Cambridge 3.403
Jacksonville 2.901
Dublin 1.560
Singapore 1.389
Princeton 1.274
Beijing 991
Medford 927
San Diego 900
Padova 818
Munich 810
Montréal 783
Des Moines 778
Mcallen 648
Nanjing 591
Helsinki 566
Boardman 460
Dong Ket 443
Roxbury 356
Santa Clara 245
Guangzhou 214
Leesburg 208
New York 187
Shenyang 170
Hebei 162
Nanchang 157
Norwalk 139
Jiaxing 129
London 124
Changsha 98
Tianjin 96
Washington 94
Shanghai 86
Indiana 82
Redwood City 80
Pune 76
Milan 69
Jinan 59
Los Angeles 59
Kharkiv 51
Dallas 45
Tappahannock 43
Hsinchu 42
Borås 41
Tokyo 41
Zhengzhou 41
Scorzè 40
Ogden 38
Kilburn 36
Rome 36
Mumbai 34
Lappeenranta 31
Chicago 28
Taipei 26
Amsterdam 25
Central 25
Frankfurt am Main 25
Mestre 25
San Francisco 24
Turin 24
Hangzhou 23
Palermo 22
Pignone 21
Chiswick 20
Ningbo 20
Phoenix 20
Rockville 20
Hounslow 19
Prescot 19
Zurich 19
Arzignano 18
Berlin 18
Falls Church 18
Bologna 17
Brussels 17
Modena 17
New Delhi 17
Yellow Springs 16
Paris 15
Sarcedo 15
Thessaloniki 15
Yangmei District 15
Bengaluru 14
Edinburgh 14
Haikou 14
New Bedfont 14
Nürnberg 14
Stuttgart 14
Hefei 13
Hwaseong-si 13
Parma 13
Taichung 13
Treviso 13
Totale 68.620
Salva come PNG Salva come JPEG
Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.617
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.370
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.019
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 721
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 653
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 513
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 511
Three terminal Breakdown evaluation in GaN-HEMT 492
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 281
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 241
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 231
Accelerated testing of RF-MEMS contact degradation through radiation sources 180
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 177
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 175
A review of failure modes and mechanisms of GaN-based HEMT's 169
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 168
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 166
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 160
Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena 158
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 158
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 157
Failure modes and mechanisms of DC-aged GaN LEDs 154
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 154
Accelerated life test of high brightness light emitting diodes 154
Analysis of hot carrier aging degradation in GaN MESFETs 153
Alternative MOS Devices for the Manufacture of High-Density ICs 152
Analysis of the role of current in the degradation of InGaN-based laser diodes 151
2.1 A/mm current density AlGaN/GaN HEMT 151
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 149
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 148
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 148
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 148
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 148
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 148
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 147
Anomalous Kink Effect in GaN High Electron Mobility Transistors 146
Defect-related degradation of Deep-UV-LEDs 145
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 144
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 144
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 143
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 143
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 143
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 143
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 142
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 142
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 141
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 141
Influence of device self-heating on trap activation energy extraction 141
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 141
A novel fast and versatile temperature measurement system for LDMOS transistors 140
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 140
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 140
Guest Editorial Special Issue on GaN Electronic Devices 140
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 140
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 139
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 139
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 139
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 139
ESD characterization of multi-chip RGB LEDs 138
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 138
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application 137
Reliability analysis of InGaN Blu-Ray laser diode 137
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 136
A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches 135
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 134
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 133
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 132
Adaptive multi-wavelength LED star simulator for space life studies 132
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 132
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs 131
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 131
A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability 131
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 131
Reliability aspects of GaN-HEMTs on composite substrates 130
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 130
Reliability issues of Gallium Nitride High Electron Mobility Transistors 130
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing 129
Low frequency noise characterization of the GaN LEDs 129
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 128
A Review on the Reliability of GaN-based Laser Diodes 128
Extensive analysis of the degradation of phosphor-converted LEDs 127
"Hot-plugging" of LED modules: Electrical characterization and device degradation 127
Failure mechanisms of gallium nitride LEDs related with passivation 127
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 127
Channel temperature measurement of PHEMT by means of optical probes 126
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 126
Diagnosis of trapping phenomena in GaN MESFETs 126
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 126
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization 126
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 125
A physical-based equivalent circuit model for an organic/electrolyte interface 125
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 124
Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes 123
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 123
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 123
Extensive analysis of the degradation of blu-ray laser diodes 123
Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells 121
Turn-On Speed Of Grounded Gate nMOS ESD protection Transistors 120
Thermal storage effects on AlGaN/GaN HEMT 120
High-temperature degradation of GaN LEDs related to passivation 120
Totale 20.074
Salva come PNG Salva come JPEG
Categoria #
all - tutte 292.431
article - articoli 144.242
book - libri 157
conference - conferenze 0
curatela - curatele 145
other - altro 0
patent - brevetti 398
selected - selezionate 0
volume - volumi 5.526
Totale 442.899
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202015.757 0 0 275 3.554 1.797 1.290 1.369 1.891 2.032 1.820 1.031 698
2020/202111.003 641 807 500 812 503 791 747 1.401 1.435 951 1.251 1.164
2021/202212.205 381 1.813 1.726 740 382 541 628 1.243 524 319 1.342 2.566
2022/202310.091 1.900 358 178 867 1.718 1.461 273 847 1.308 130 677 374
2023/20246.795 532 919 726 550 474 889 498 285 238 321 642 721
2024/20255.475 2.719 1.795 961 0 0 0 0 0 0 0 0 0
Totale 84.504