BAGATIN, MARTA
 Distribuzione geografica
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Continente #
NA - Nord America 7.621
EU - Europa 1.178
AS - Asia 376
Continente sconosciuto - Info sul continente non disponibili 5
SA - Sud America 5
OC - Oceania 2
Totale 9.187
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Nazione #
US - Stati Uniti d'America 7.616
IE - Irlanda 335
CN - Cina 315
IT - Italia 315
FI - Finlandia 139
SE - Svezia 132
DE - Germania 109
GB - Regno Unito 69
UA - Ucraina 35
VN - Vietnam 29
GR - Grecia 12
NL - Olanda 10
FR - Francia 7
IR - Iran 7
JP - Giappone 7
IN - India 6
CA - Canada 5
ES - Italia 5
EU - Europa 5
SG - Singapore 4
BR - Brasile 3
CH - Svizzera 3
KR - Corea 3
TW - Taiwan 3
NO - Norvegia 2
RU - Federazione Russa 2
TR - Turchia 2
AU - Australia 1
BE - Belgio 1
CL - Cile 1
HR - Croazia 1
NZ - Nuova Zelanda 1
PY - Paraguay 1
RO - Romania 1
Totale 9.187
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Città #
Fairfield 1.511
Woodbridge 926
Houston 770
Ann Arbor 706
Ashburn 553
Cambridge 549
Seattle 519
Wilmington 450
Dublin 333
Chandler 268
Padova 151
San Diego 143
Princeton 139
Jacksonville 119
Medford 112
Des Moines 95
Beijing 67
Nanjing 60
Guangzhou 59
Boardman 58
Helsinki 50
Roxbury 36
Leesburg 33
Dong Ket 29
Mestre 24
Munich 23
Shanghai 21
Shenyang 20
London 19
Nanchang 17
Milan 15
Changsha 14
Hebei 14
Jiaxing 14
Los Angeles 12
Venice 11
Washington 10
Duncan 9
Borås 8
Ogden 8
Cagliari 7
Jinan 7
New York 7
Redwood City 7
Tianjin 7
Hounslow 6
Norwalk 6
Las Vegas 5
Ningbo 5
Rome 5
Brendola 4
Chicago 4
Hanover 4
Kharkiv 4
Kilburn 4
Madrid 4
Albino 3
Groningen 3
Indiana 3
Nürnberg 3
Oberentfelden 3
Rockville 3
Round Lake 3
San Francisco 3
Tabriz 3
Tappahannock 3
Acton 2
Arlington 2
Auburn Hills 2
Bologna 2
Chiswick 2
Daan 2
Grenoble 2
Hamburg 2
L’Aquila 2
Nashville 2
North York 2
Occhiobello 2
Ogaya 2
Orange 2
Parma 2
Prato 2
Prescot 2
Pune 2
Redmond 2
San Jose 2
Sant'Elia Fiumerapido 2
Selvazzano Dentro 2
Stockholm 2
Suwon 2
Tokyo 2
Zhengzhou 2
Ankara 1
Asunción 1
Azzano Decimo 1
Brussels 1
Chengdu 1
Clearwater 1
Delhi 1
Edinburgh 1
Totale 8.151
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Nome #
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 359
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 172
Destructive events in NAND Flash memories irradiated with heavy ions 133
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 122
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 122
Neutron-induced soft errors in advanced Flash memories 121
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 120
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 115
Error Instability in Floating Gate Flash Memories Exposed to TID 114
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 113
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 113
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 112
Neutron-Induced Upsets in NAND Floating Gate Memories 109
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 108
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 106
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 106
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 106
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 103
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 103
TID sensitivity of NAND Flash memory building blocks 103
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 101
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 101
Radiation Effects in NAND Flash Memories 99
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 97
Total Ionizing Dose Effects in 3-D NAND Flash Memories 96
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 95
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 94
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 94
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 92
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 91
Single Event Effects in 90-nm Phase Change Memories 90
Radiation environment in the ITER neutral beam injector prototype 88
Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose 87
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications 87
Muon-induced soft errors in 16-nm NAND flash memories 87
Total Ionizing Dose Effects in Si-Based Tunnel FETs 86
TID Sensitivity of NAND Flash Memory Building Blocks 86
Impact of total dose on heavy-ion upsets in floating gate arrays 86
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 85
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 85
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 84
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 84
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 84
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 83
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 83
Single and Multiple Cell Upsets in 25-nm NAND Flash Memories 83
Radiation Environment in the ITER Neutral Beam Injector Prototype 82
Space and terrestrial radiation effects in flash memories 81
Proton-induced upsets in 41-nm NAND floating gate cells 80
SEE tests of the NAND flash radiation tolerant intelligent memory stack 80
Soft errors in floating gate memory cells: A review 80
Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response 79
Factors impacting the temperature dependence of soft errors in commercial SRAMs 79
Ionizing radiation compatibility in the MITICA neutral beam prototype 77
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 77
Proton irradiation effects on commercial laser diodes 77
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 77
Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors 77
Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle 75
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs 75
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 74
Neutron and alpha ser in advanced NAND Flash memories 72
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 71
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose 71
Heavy-ion induced single event upsets in phase-change memories 71
Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells 70
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories 70
Experimental and Simulation Study of the Effects of Heavy-ion Irradiation on HfO2-based RRAM Cells 70
Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions 69
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility 69
Atmospheric Neutron Soft Errors in 3D NAND Flash Memories 69
Effects of bias on the radiation responses of Si-based TFETs 68
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 68
Upsets in Erased Floating Gate Cells with High-Energy Protons 68
65 nm technology for HEP: Status and perspective 68
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence 68
Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories 68
Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide 67
Radiation and particle effects on avionics induced by Terrestrial Gamma-Ray Flashes 66
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 66
Temperature dependence of neutron-induced soft errors in SRAMs 64
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose 64
Proton-Induced Upsets in SLC and MLC NAND Flash Memories 63
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 63
High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies 62
Effects of electrical stress and ionizing radiation on Si-based TFETs 62
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories 62
Complete loss of functionality and permanent page fails in NAND flash memories 62
Effects of Ionizing Radiation in Flash Memories 62
Heavy-ion upset immunity of RRAM cells based on thin HfO2layers 61
Effects of high-energy electrons in advanced NAND flash memories 61
Radiation Effects in Flash Memories 60
RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades 58
A low cost robust radiation hardened flip-flop circuit 57
Simulation and Experiment in Neutron Induced Single Event Effects in SRAM 57
Scaling trends of neutron effects in MLC NAND Flash memories 56
Alpha-induced soft errors in Floating Gate flash memories 55
Atmospheric-like neutron attenuation during accelerated neutron testing with multiple printed circuit boards 54
First tests of a new facility for device-level, board-level and system-level neutron irradiation of microelectronics 54
Low-power, subthreshold reference circuits for the space environment: Evaluated with γ-rays, X-rays, protons and heavy ions 54
Totale 8.558
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Categoria #
all - tutte 30.438
article - articoli 19.791
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 647
Totale 50.876
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019728 0 0 0 0 0 0 0 0 0 0 386 342
2019/20202.050 292 65 41 135 224 176 230 252 279 167 119 70
2020/20211.249 66 95 78 126 30 77 70 136 197 90 184 100
2021/20221.714 34 193 304 108 80 43 83 212 88 34 163 372
2022/20231.027 214 25 41 102 169 106 39 80 90 12 84 65
2023/2024579 58 98 88 76 50 51 23 26 20 89 0 0
Totale 9.307