BAGATIN, MARTA
 Distribuzione geografica
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Continente #
NA - Nord America 8.236
EU - Europa 1.887
AS - Asia 1.562
SA - Sud America 217
AF - Africa 67
OC - Oceania 14
Continente sconosciuto - Info sul continente non disponibili 11
Totale 11.994
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Nazione #
US - Stati Uniti d'America 8.203
SG - Singapore 660
IT - Italia 436
CN - Cina 383
HK - Hong Kong 372
IE - Irlanda 336
DE - Germania 215
BR - Brasile 189
FI - Finlandia 179
PL - Polonia 151
SE - Svezia 137
GB - Regno Unito 84
RU - Federazione Russa 70
NL - Olanda 64
FR - Francia 61
UA - Ucraina 40
AT - Austria 38
VN - Vietnam 32
JP - Giappone 15
GR - Grecia 13
IN - India 13
ES - Italia 12
CA - Canada 11
IR - Iran 9
ZA - Sudafrica 9
CH - Svizzera 8
TR - Turchia 8
CI - Costa d'Avorio 7
KR - Corea 7
AU - Australia 6
SA - Arabia Saudita 6
UZ - Uzbekistan 6
BD - Bangladesh 5
BE - Belgio 5
EC - Ecuador 5
EU - Europa 5
IQ - Iraq 5
MA - Marocco 5
RO - Romania 5
AR - Argentina 4
AZ - Azerbaigian 4
BJ - Benin 4
KZ - Kazakistan 4
NC - Nuova Caledonia 4
PY - Paraguay 4
RW - Ruanda 4
SN - Senegal 4
TW - Taiwan 4
XK - ???statistics.table.value.countryCode.XK??? 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BO - Bolivia 3
CL - Cile 3
CO - Colombia 3
CV - Capo Verde 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
JO - Giordania 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
PH - Filippine 3
PK - Pakistan 3
TT - Trinidad e Tobago 3
VE - Venezuela 3
YE - Yemen 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
BB - Barbados 2
BF - Burkina Faso 2
CR - Costa Rica 2
CW - ???statistics.table.value.countryCode.CW??? 2
DK - Danimarca 2
DM - Dominica 2
EE - Estonia 2
JM - Giamaica 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
MD - Moldavia 2
ML - Mali 2
MX - Messico 2
MZ - Mozambico 2
NG - Nigeria 2
NP - Nepal 2
PE - Perù 2
PR - Porto Rico 2
PS - Palestinian Territory 2
SD - Sudan 2
SI - Slovenia 2
SK - Slovacchia (Repubblica Slovacca) 2
SO - Somalia 2
TJ - Tagikistan 2
UG - Uganda 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
AO - Angola 1
BY - Bielorussia 1
CD - Congo 1
CM - Camerun 1
DO - Repubblica Dominicana 1
Totale 11.966
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Città #
Fairfield 1.511
Woodbridge 926
Houston 773
Ann Arbor 706
Ashburn 570
Cambridge 549
Seattle 520
Wilmington 450
Hong Kong 371
Singapore 366
Dublin 334
Chandler 268
Boardman 184
Padova 171
Bytom 143
San Diego 143
Princeton 139
Santa Clara 124
Jacksonville 119
Medford 112
Des Moines 95
Munich 92
Beijing 69
Nanjing 60
Guangzhou 59
Helsinki 55
Roxbury 36
Leesburg 33
Dong Ket 29
Milan 29
Turku 28
Shanghai 27
Mestre 24
London 22
Shenyang 20
Chicago 18
Nanchang 17
Los Angeles 16
Vienna 16
Venice 15
Changsha 14
Hebei 14
Jiaxing 14
Nuremberg 13
Padua 13
São Paulo 13
Rome 12
Washington 11
New York 10
Duncan 9
Borås 8
Lappeenranta 8
Ogden 8
Abidjan 7
Cagliari 7
Cape Town 7
Council Bluffs 7
Frankfurt am Main 7
Jinan 7
Redwood City 7
Rio de Janeiro 7
San Francisco 7
Tianjin 7
Tokyo 7
Dallas 6
Falkenstein 6
Hounslow 6
Norwalk 6
Tashkent 6
Amsterdam 5
Boston 5
Las Vegas 5
Ningbo 5
Warsaw 5
Baku 4
Belo Horizonte 4
Brasília 4
Brendola 4
Brooklyn 4
Brussels 4
Cotonou 4
Curitiba 4
Dakar 4
Hanover 4
Kharkiv 4
Kigali 4
Kilburn 4
Madrid 4
Manchester 4
Noumea 4
Porto Alegre 4
Pristina 4
Salt Lake City 4
Stockholm 4
Toronto 4
Albino 3
Amman 3
Asunción 3
Birmingham 3
Bologna 3
Totale 9.617
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Nome #
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 393
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 193
Destructive events in NAND Flash memories irradiated with heavy ions 156
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 143
Neutron-Induced Upsets in NAND Floating Gate Memories 142
Error Instability in Floating Gate Flash Memories Exposed to TID 137
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 136
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 135
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 134
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 134
Neutron-induced soft errors in advanced Flash memories 131
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 130
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 129
Effects of Ionizing Radiation in Flash Memories 129
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 128
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 128
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 124
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 122
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 122
Radiation Effects in NAND Flash Memories 119
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 119
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 119
TID sensitivity of NAND Flash memory building blocks 119
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 118
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 117
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 117
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 117
Total Ionizing Dose Effects in 3-D NAND Flash Memories 116
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 115
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 110
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 110
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 110
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 108
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 108
TID Sensitivity of NAND Flash Memory Building Blocks 108
65 nm technology for HEP: Status and perspective 107
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 106
Single Event Effects in 90-nm Phase Change Memories 105
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 104
Atmospheric Neutron Soft Errors in 3D NAND Flash Memories 104
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 103
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications 102
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 102
Impact of total dose on heavy-ion upsets in floating gate arrays 102
Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose 100
SEE tests of the NAND flash radiation tolerant intelligent memory stack 100
Radiation environment in the ITER neutral beam injector prototype 100
Ionizing radiation compatibility in the MITICA neutral beam prototype 99
Total Ionizing Dose Effects in Si-Based Tunnel FETs 98
Muon-induced soft errors in 16-nm NAND flash memories 98
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 97
Space and terrestrial radiation effects in flash memories 96
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 96
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 95
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 95
Single and Multiple Cell Upsets in 25-nm NAND Flash Memories 95
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 95
Radiation and particle effects on avionics induced by Terrestrial Gamma-Ray Flashes 94
Radiation Environment in the ITER Neutral Beam Injector Prototype 94
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 94
Soft errors in floating gate memory cells: A review 93
Factors impacting the temperature dependence of soft errors in commercial SRAMs 92
Experimental and Simulation Study of the Effects of Heavy-ion Irradiation on HfO2-based RRAM Cells 92
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility 92
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs 92
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 91
Proton irradiation effects on commercial laser diodes 90
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose 90
Proton-induced upsets in 41-nm NAND floating gate cells 88
Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response 88
Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors 88
Neutron and alpha ser in advanced NAND Flash memories 87
A low cost robust radiation hardened flip-flop circuit 87
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence 87
Nuclear physics midterm plan at Legnaro National Laboratories (LNL) 86
Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle 85
Effects of bias on the radiation responses of Si-based TFETs 85
RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades 84
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose 82
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories 82
Upsets in Erased Floating Gate Cells with High-Energy Protons 80
Heavy-ion induced single event upsets in phase-change memories 80
Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide 79
Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions 79
Radiation Effects in Flash Memories 79
Atmospheric-like neutron attenuation during accelerated neutron testing with multiple printed circuit boards 79
Simulation and Experiment in Neutron Induced Single Event Effects in SRAM 79
Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells 78
Proton-Induced Upsets in SLC and MLC NAND Flash Memories 78
Alpha-induced soft errors in Floating Gate flash memories 78
Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories 78
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories 77
Complete loss of functionality and permanent page fails in NAND flash memories 77
Heavy-ion upset immunity of RRAM cells based on thin HfO2layers 77
High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies 75
Test results and prospects for RD53A, a large scale 65 nm CMOS chip for pixel readout at the HL-LHC 75
Effects of electrical stress and ionizing radiation on Si-based TFETs 74
Temperature dependence of neutron-induced soft errors in SRAMs 74
Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors 73
Effects of high-energy electrons in advanced NAND flash memories 73
Totale 10.460
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Categoria #
all - tutte 45.129
article - articoli 29.289
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.047
Totale 75.465
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.249 66 95 78 126 30 77 70 136 197 90 184 100
2021/20221.714 34 193 304 108 80 43 83 212 88 34 163 372
2022/20231.027 214 25 41 102 169 106 39 80 90 12 84 65
2023/2024760 58 108 94 81 53 51 27 27 20 90 81 70
2024/20252.601 15 160 89 101 309 79 106 222 181 130 490 719
2025/202659 59 0 0 0 0 0 0 0 0 0 0 0
Totale 12.148