Sfoglia per Autore  

Opzioni
Mostrati risultati da 61 a 80 di 821
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Addressing the electrical degradation of 845 nm micro-transfer printed VCSILs through TCAD simulations 2023 Zenari, M.Buffolo, M.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + - - Proceedings of 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications 2023 Santi, Carlo DeMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 2023 M. MeneghiniA. MarcuzziC. De SantiG. MeneghessoE. Zanoni + - - Proceedings of ICSCRM 2023 (International Conference on Silicon Carbide and Related Materials)
Reliability investigation on 265 nm UV-C LEDs from a commercial point of view 2023 Francesco PivaMatteo BuffoloCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniNicola Trivellin - - Proceedings of 2023 MRS fall conference
Degradation of GaN-based InGaN-GaN MQWs solar cells caused by Thermally-Activated Diffusion 2023 Nicoletto M.Caria A.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE Photonics West 2023 conference
Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness 2023 De Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + MICROELECTRONICS RELIABILITY - -
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 2023 Alberto MarcuzziDavide FaveroCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini - - Proceedings of the 7th AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2023)
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 2023 Gao, Z.Rampazzo, FDe Santi, CFornasier, MMeneghesso, GMeneghini, MZanoni, E + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 2023 Gao, ZChiocchetta, FRampazzo, FDe Santi, CFornasier, MMeneghesso, GMeneghini, MZanoni, E - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)
Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes 2023 Buffolo, MMeneghini, M + IEEE ACCESS - -
Experimental analysis of degradation of Multi-Quantum Well GaN-based solar cells under current stress 2023 Caria A.De Santi C.Nicoletto M.Buffolo M.Chen H.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE Photonics West 2023 conference
Reliability of commercial UV-C LEDs for disinfection purposes 2022 N. TrivellinF. PivaD. FiorimonteM. BuffoloC. De SantiE. ZanoniG. MeneghessoM. Meneghini - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Analysis and Modeling of VthShift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature 2022 Masin F.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedgins of 2022 IEEE International Reliability Physics Symposium (IRPS)
On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes 2022 Piva, FFiorimonte, DTrivellin, NDe Santi, CBuffolo, MMeneghesso, GZanoni, EMeneghini, M - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs 2022 Masin F.De Santi C.Meneghini M. + - PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS Proceedings of 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 2022 Carlo De SantiManuel FregolentMatteo BuffoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 4th International Workshop on Gallium Oxide and Related Materials, Nagano, Japan
Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study 2022 Zenari, MBuffolo, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 11990, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022
Quantum efficiency of InGaN-GaN multi-quantum well solar cells: Experimental characterization and modeling 2022 Caria A.Nicoletto M.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405 nm optical stress 2022 Caria, ADe Santi, CNicoletto, MBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence 2022 Caria A.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. JOURNAL OF APPLIED PHYSICS - -
Mostrati risultati da 61 a 80 di 821
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile