BISI, DAVIDE

BISI, DAVIDE  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 25 (tempo di esecuzione: 0.055 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 2015 MARINO, FABIO ALESSIOBISI, DAVIDEMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + SOLID-STATE ELECTRONICS - -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 2015 BISI, DAVIDEMENEGHINI, MATTEO + SOLID-STATE ELECTRONICS - -
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 2013 BISI, DAVIDEMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 2016 BISI, DAVIDEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES - -
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Field plate related reliability improvements in GaN-on-Si HEMTs 2012 BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDESILVESTRI, RICCARDOZANANDREA, ALBERTOZANONI, ENRICO + ECS TRANSACTIONS - -
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 2015 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 2015 ROSSETTO, ISABELLAMENEGHINI, MATTEOBISI, DAVIDEBARBATO, ALESSANDROMARCON, DANIELAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3dielectrics grown on GaN 2017 Bisi, DavideMeneghini, Matteo + JOURNAL OF APPLIED PHYSICS - -
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 2017 Ruzzarin, M.Meneghini, M.Bisi, D.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 2014 BISI, DAVIDEMENEGHINI, MATTEOMARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 2018 Bisi, DavideDe Santi, CarloMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE ELECTRON DEVICE LETTERS - -
On trapping mechanisms at oxide-traps in Al<inf>2</inf>O<inf>3</inf>/GaN metal-oxide-semiconductor capacitors 2016 BISI, DAVIDEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Proton induced trapping effect on space compatible GaN HEMTs 2014 STOCCO, ANTONIOGERARDIN, SIMONEBISI, DAVIDEDALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability and parasitic issues in GaN-based power HEMTs: A review 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDEZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 2015 MENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOBISI, DAVIDEZANONI, ENRICOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -