NARDO, ARIANNA

NARDO, ARIANNA  

Università di Padova  

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Risultati 1 - 20 di 26 (tempo di esecuzione: 0.018 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Analysis of parasitic effects and reliability issues of Gallium Nitride (GaN) -based devices 2023 NARDO, ARIANNA - - -
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs 2020 De Santi C.Nardo A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Charge trapping and degradation of Ga2O3 isolation structures for power electronics 2020 De Santi C.Nardo A.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Charge trapping in GaN Power Transistors: Challenges and Perspectives 2021 Meneghini, MModolo, NNardo, ADe Santi, CMeneghesso, GZanoni, E + - - 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Comparison between lateral and vertical Ga2O3 isolation structures 2019 C. De SantiA. NardoG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3)
Degradation effects and origin in H-terminated diamond MESFETs 2020 De Santi C.Nardo A.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Dynamic performance of wide bandgap devices 2022 C. De SantiM. FregolentN. ModoloA. NardoM. BuffoloF. RampazzoG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 6th IEEE International Conference on Emerging Electronics (ICEE 2022)
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 2020 Modolo N.Nardo A.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability 2021 De Santi C.Nardo A.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 2022 Nardo, Ariannade Santi, CarloCarraro, C.Sgarbossa, FrancescoBuffolo, M.Gasparotto, A.Napolitani, EnricoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 2020 Nardo A.Meneghini M.Barbato A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes 2021 Nardo A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate 2024 Favero D.De Santi C.Nardo A.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition 2020 De Santi C.Nardo A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -