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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEROSSETTO, ISABELLAZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Field- and time-dependent degradation of GaN HEMTs 2016 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLADE SANTI, CARLO - - proc. of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2016,
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 2016 MENEGHESSO, GAUDENZIOBISI, DAVIDEROSSETTO, ISABELLARUZZARIN, MARIAMENEGHINI, MATTEOZANONI, ENRICO - - IEEE International Integrated Reliability Workshop (IEEE IIRW), October 8-12, 2017, Stanford Sierra Conference Center, Fallen Leaf Lake, CA, USA
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 2016 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANADE SANTI, CARLOROSSETTO, ISABELLA - - Proc. of the 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability
Reliability and trapping issues in GaN based MIS HEMTs 2016 MENEGHESSO, GAUDENZIOROSSETTO, ISABELLADE SANTI, CARLOMENEGHINI, MATTEOZANONI, ENRICO + - - MRS Fall Meeting, "Wide-Bandgap Materials for Energy Efficiency: Power Electronics and Solid-State Lighting"
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Normally-off HEMTs with p-GaN Gate: Stability and Lifetime Extrapolation 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLAZANONI, ENRICO + - - proc. of the International Workshop on Nitride Semiconductors (IWN 2016)
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 2016 TAJALLI, ALALEHROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 2016 BARBATO, ALESSANDROROSSETTO, ISABELLABARBATO, MARCOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEORUZZARIN, MARIAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Field-dependent degradation mechanisms in GaN-based HEMTs 2016 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOROSSETTO, ISABELLARAMPAZZO, FABIANADE SANTI, CARLOBISI, DAVIDEZANONI, ENRICO + - - Proc. of the 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Reliability and parasitic issues in GaN-based power HEMTs: A review 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDEZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 2016 MENEGHINI, MATTEOSILVESTRI, RICCARDOROSSETTO, ISABELLAZANONI, ENRICOMENEGHESSO, GAUDENZIODALCANALE, STEFANO + MICROELECTRONICS RELIABILITY - -
Gate stability of GaN-Based HEMTs with P-Type Gate 2016 MENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + ELECTRONICS - -
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEODE SANTI, CARLODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 2015 ZANONI, ENRICOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOBISI, DAVIDEROSSETTO, ISABELLASTOCCO, ANTONIO - - WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 2015 ROSSETTO, ISABELLAMENEGHINI, MATTEOBARBATO, MARCORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Mostrati risultati da 21 a 40 di 63
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