GAO, ZHAN

GAO, ZHAN  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 11 di 11 (tempo di esecuzione: 0.023 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 2020 Gao Z.Rampazzo F.Meneghini M.De Santi C.Chiocchetta F.Marcon D.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 2023 Gao, ZhanDe Santi, CarloRampazzo, FabianaSaro, MarcoFornasier, MirkoMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results 2022 Zanoni, ERampazzo, FDe Santi, CGao, ZMeneghesso, GMeneghini, M + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Harmonic generation in metal-insulator and metal-insulator-metal nanostructures 2019 Gao Z.De Ceglia D. + JOURNAL OF APPLIED PHYSICS - -
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 2019 Mukherjee K.De Santi C.Rzin M.Gao Z.Meneghesso G.Meneghini M.Zanoni E. MICROELECTRONICS RELIABILITY - -
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 2023 Zanoni, EnricoSanti, Carlo DeGao, ZhanBuffolo, MatteoFornasier, MirkoSaro, MarcoPieri, Francesco DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates 2023 Gao, ZhanRampazzo, F.Meneghini, M.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 2019 Gao Z.Meneghini M.Rampazzo F.Rzin M.De Santi C.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 2023 Gao, Z.Rampazzo, FDe Santi, CFornasier, MMeneghesso, GMeneghini, MZanoni, E + IEEE TRANSACTIONS ON ELECTRON DEVICES - -