STOCCO, ANTONIO

STOCCO, ANTONIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 18 di 18 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography 2010 STOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROSCOPY AND MICROANALYSIS - -
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHESSO, GAUDENZIOZANONI, ENRICO APPLIED PHYSICS LETTERS - -
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 2013 MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications 2014 MARINO, FABIO ALESSIOSTOCCO, ANTONIOBARBATO, MARCOZANONI, ENRICOMENEGHESSO, GAUDENZIO IEEE ELECTRON DEVICE LETTERS - -
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 2013 MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOCIBIN, GIULIAZANONI, ENRICOMENEGHESSO, GAUDENZIO + JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES - -
Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices 2013 STOCCO, ANTONIOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 2010 MENEGHINI, MATTEOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 2014 STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 2015 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Proton induced trapping effect on space compatible GaN HEMTs 2014 STOCCO, ANTONIOGERARDIN, SIMONEBISI, DAVIDEDALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 2009 RONCHI, NICOLO'ZANON, FRANCOSTOCCO, ANTONIOTAZZOLI, AUGUSTOZANONI, ENRICOMENEGHESSO, GAUDENZIO MICROELECTRONICS RELIABILITY - -
Reliability issues of Gallium Nitride High Electron Mobility Transistors 2010 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES - -
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 2012 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -