FAVERO, DAVIDE

FAVERO, DAVIDE  

Università di Padova  

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Risultati 1 - 9 di 9 (tempo di esecuzione: 0.012 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 2023 Alberto MarcuzziDavide FaveroCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini - - Proceedings of the 7th AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2023)
GaN Vertical Devices: challenges for high performance and stability 2023 Matteo MeneghiniManuel FregolentCarlo De SantiMatteo BuffoloAlberto MarcuzziDavide FaveroGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14 conference
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 2023 D. FaveroA. MarcuzziC. De SantiG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 7th AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2023)
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 2023 Favero, DCavaliere, ADe Santi, CBorga, MMeneghesso, GZanoni, EMeneghini, M + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 2022 D. FaveroC. De SantiK. MukherjeeF. RampazzoG. MeneghessoE. ZanoniM. Meneghini + MICROELECTRONICS RELIABILITY - -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 2022 Favero D.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of 2022 IEEE International Reliability Physics Symposium (IRPS)
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 2024 Buffolo, M.Favero, D.Marcuzzi, A.Santi, Carlo DeMeneghesso, G.Zanoni, E.Meneghini, M. IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 2023 Favero, D.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -