Sfoglia per Autore
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs
2023 DE SANTI, Carlo; Modolo, Nicola; Baratella, Giulio; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
2023 Favero, D; Cavaliere, A; De Santi, C; Borga, M; Goncalez, W; Geens, K; Bakeroot, B; Decoutere, S; Meneghesso, G; Zanoni, E; Meneghini, M
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs
2022 DE SANTI, Carlo; Modolo, Nicola; Baratella, Giulio; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
2020 Borga, M.; Mukherjee, K.; De Santi, C.; Stoffels, S.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
2020 Borga, Matteo; DE SANTI, Carlo; Stoffels, S.; Bakeroot, Benoit; Li, Xiangdong; Zhao, M.; Vanhove, M.; Decoutere, S.; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
2020 Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
2020 Tajalli, A.; Borga, M.; Meneghini, M.; Santi, C. D.; Benazzi, D.; Besendorfer, S.; Pusche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Kabouche, R.; Abid, I.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.
Characterization and modeling of GaN-based transistors for power applications
2019 Borga, Matteo
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate
2019 Canato, E.; Masin, F.; Borga, M.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Stockman, A.; Banerjee, A.; Moens, P.
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis
2019 Fabris, E.; Meneghini, M.; De Santi, C.; Borga, M.; Kinoshita, Y.; Tanaka, K.; Ishida, H.; Ueda, T.; Meneghesso, G.; Zanoni, E.
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications
2019 De Santi, C.; Meneghini, M.; Barbato, A.; Borga, M.; Canato, E.; Chiocchetta, F.; Fabris, E.; Gao, Z.; Masin, F.; Mukherjee, K.; Nardo, A.; Ruzzarin, M.; Rzin, M.; Tajalli, A.; Meneghesso, G.; Zanoni, E.
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
2019 Borga, M.; Meneghini, M.; Benazzi, D.; Puesche, R.; Delruyn, J.; Abid, I.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives
2019 Meneghini, Matteo; DE SANTI, Carlo; Barbato, Alessandro; Borga, Matteo; Canato, Eleonora; Chiocchetta, Francesca; Fabris, Elena; Gao, Zhan; Masin, Fabrizio; Mukherjee, Kalparupa; Nardo, Arianna; Rampazzo, Fabiana; Ruzzarin, Maria; Rzin, Mehdi; Tajalli, Alaleh; Barbato, Marco; Meneghesso, Gaudenzio; Zanoni, Enrico
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects
2019 Meneghini, M.; Barbato, A.; Borga, M.; De Santi, C.; Barbato, M.; Stoffels, S.; Zhao, M.; Posthuma, N.; Decoutere, S.; Haeberlen, O.; Detzel, T.; Meneghesso, G.; Zanoni, E.
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study
2019 Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; Stoffels, Steve; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
2019 Stoffels, S.; Posthuma, N.; Decoutere, S.; Bakeroot, B.; Tallarico, A. N.; Sangiorgi, Enrico; Fiegna, C.; Zheng, J.; Ma, X.; Borga, M.; Fabris, E.; Meneghini, M.; Zanoni, E.; Meneghesso, G.; Priesol, J.; Satka, A.
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis
2019 Fabris, E.; Meneghini, M.; De Santi, C.; Borga, M.; Meneghesso, G.; Zanoni, E.; Kinoshita, Y.; Tanaka, K.; Ishida, H.; Ueda, T.
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
2019 Fabris, Elena; Meneghini, Matteo; De Santi, Carlo; Borga, Matteo; Kinoshita, Yusuke; Tanaka, Kenichiro; Ishida, Hidetoshi; Ueda, Tetsuzo; Meneghesso, Gaudenzio; Zanoni, Enrico
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