DE SANTI, CARLO
DE SANTI, CARLO
Dipartimento di Ingegneria dell'Informazione - DEI
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
2018 Rossetto, I.; Meneghini, M.; De Santi, C.; Pandey, Sudip; Gajda, M.; Hurkx, G. A. M.; Croon, J.; Šonský, J.; Meneghesso, G.; Zanoni, E.
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
2023 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
2020 Modolo, N.; Meneghini, M.; Barbato, A.; Nardo, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sicre, S.; Prechtl, G.; Curatola, G.
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
2020 Modolo, Nicola; Tang, Shun-Wei; Jiang, Hong-Jia; De Santi, Carlo; Meneghini, Matteo; Wu, Tian-Li
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
2016 Musolino, M.; Van Treeck, D; Tahraoui, A.; Scarparo, L.; DE SANTI, Carlo; Meneghini, Matteo; Zanoni, Enrico; Geelhaar, L.; Riechert, H.
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
2021 Modolo, N.; De Santi, C.; Minetto, A.; Sayadi, L.; Sicre, S.; Prechtl, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A review of the reliability of integrated ir laser diodes for silicon photonics
2021 Buffolo, M.; De Santi, C.; Norman, J.; Shang, C.; Bowers, J. E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
2023 Zenari, Michele; Buffolo, Matteo; De Santi, Carlo; Norman, Justin; Hughes, Eamonn T.; Bowers, John E.; Herrick, Robert; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
2024 Fregolent, Manuel; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Cester, Andrea; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects
2015 LA GRASSA, Marco; Meneghini, Matteo; DE SANTI, Carlo; Mandurrino, Marco; Goano, Michele; Bertazzi, Francesco; Zeisel, Roland; Galler, Bastian; Meneghesso, Gaudenzio; Zanoni, Enrico
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs
2023 Trivellin, Nicola; Buffolo, Matteo; De Santi, Carlo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode
2023 Casu, C.; Buffolo, M.; Caria, A.; Piva, F.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes
2019 Fabris, E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.; De Santi, C.; Caria, A.; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation
2020 De Santi, C.; Fregolent, M.; Buffolo, M.; Wong, M. H.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
2020 De Santi, C.; Pavanello, L.; Nardo, A.; Verona, C.; Rinati, G. V.; Cannata, D.; Pietrantonio, F. D.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
2021 Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Hübner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization
2021 Mukherjee, K.; De Santi, C.; Borga, M.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Diehle, P.; Hubner, S.; Altmann, F.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
2019 Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M.