GERARDIN, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 18.272
AS - Asia 4.906
EU - Europa 4.316
AF - Africa 1.572
SA - Sud America 1.173
OC - Oceania 150
Continente sconosciuto - Info sul continente non disponibili 82
Totale 30.471
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Nazione #
US - Stati Uniti d'America 17.476
SG - Singapore 1.669
CN - Cina 838
BR - Brasile 674
HK - Hong Kong 637
IE - Irlanda 595
IT - Italia 575
DE - Germania 329
FI - Finlandia 314
PL - Polonia 284
VN - Vietnam 262
SE - Svezia 243
GB - Regno Unito 177
UA - Ucraina 158
FR - Francia 150
RU - Federazione Russa 141
NL - Olanda 108
AR - Argentina 87
AT - Austria 87
KR - Corea 86
EC - Ecuador 71
IN - India 71
ES - Italia 70
TR - Turchia 70
ZA - Sudafrica 66
MX - Messico 63
AE - Emirati Arabi Uniti 60
RO - Romania 59
GR - Grecia 58
AO - Angola 57
CH - Svizzera 57
CI - Costa d'Avorio 57
JP - Giappone 57
DZ - Algeria 54
PY - Paraguay 54
UZ - Uzbekistan 54
CO - Colombia 53
HU - Ungheria 53
PS - Palestinian Territory 52
AL - Albania 51
IQ - Iraq 51
IR - Iran 51
VE - Venezuela 51
MA - Marocco 50
CU - Cuba 49
AZ - Azerbaigian 48
DO - Repubblica Dominicana 48
MK - Macedonia 48
NO - Norvegia 48
NP - Nepal 48
BE - Belgio 47
PA - Panama 47
PK - Pakistan 47
UG - Uganda 47
BZ - Belize 46
TJ - Tagikistan 46
KH - Cambogia 45
LB - Libano 45
MD - Moldavia 45
SO - Somalia 45
TT - Trinidad e Tobago 45
ID - Indonesia 44
JM - Giamaica 44
BG - Bulgaria 43
EG - Egitto 43
PE - Perù 43
SK - Slovacchia (Repubblica Slovacca) 43
BA - Bosnia-Erzegovina 42
CG - Congo 42
EE - Estonia 42
LA - Repubblica Popolare Democratica del Laos 42
MU - Mauritius 42
SA - Arabia Saudita 42
CL - Cile 41
DK - Danimarca 41
ET - Etiopia 41
GN - Guinea 41
HN - Honduras 41
MG - Madagascar 41
PT - Portogallo 41
PR - Porto Rico 40
SI - Slovenia 40
TZ - Tanzania 40
XK - ???statistics.table.value.countryCode.XK??? 40
YT - Mayotte 40
HR - Croazia 39
JO - Giordania 39
KE - Kenya 39
KZ - Kazakistan 39
PH - Filippine 39
YE - Yemen 39
ZM - Zambia 39
AM - Armenia 38
AU - Australia 38
BW - Botswana 38
GH - Ghana 38
LV - Lettonia 38
LY - Libia 38
MR - Mauritania 38
RS - Serbia 38
Totale 28.650
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Città #
Fairfield 2.518
Woodbridge 1.628
Houston 1.488
Ann Arbor 1.260
Ashburn 1.173
Singapore 975
Cambridge 921
Seattle 908
Wilmington 819
Hong Kong 606
Dublin 581
Chandler 480
Jacksonville 439
Boardman 306
San Diego 263
Santa Clara 250
Princeton 243
Bytom 227
Padova 216
Leesburg 201
Beijing 199
Medford 161
Des Moines 153
Los Angeles 117
Munich 112
Helsinki 105
Nanjing 98
Guangzhou 96
Roxbury 91
Dong Ket 71
Chicago 63
Ho Chi Minh City 62
Buffalo 59
Vienna 58
Luanda 52
São Paulo 52
Abidjan 50
London 49
Milan 49
Baku 48
Tashkent 48
Shanghai 47
Kampala 46
Hanoi 44
Panama City 44
Dushanbe 43
Havana 43
New York 43
Hefei 42
Phnom Penh 41
Conakry 40
Lusaka 39
Seoul 39
Amman 37
Kigali 37
Nairobi 37
Nouakchott 37
Redondo Beach 37
Shenyang 37
Vientiane 37
Antananarivo 36
Dakar 36
Dar es Salaam 35
Ulan Bator 34
Gaborone 33
Harare 33
Johannesburg 33
Mestre 33
Accra 32
Managua 32
Riga 32
Tokyo 32
Willemstad 32
Andorra la Vella 31
Cotonou 31
Castries 30
Maputo 30
Pristina 30
Salt Lake City 30
Tallinn 30
Bamako 29
Hebei 29
Bishkek 28
Chisinau 28
Kinshasa 28
Libreville 28
Turku 28
Warsaw 28
Addis Ababa 27
Kingston 27
Kingstown 27
Montevideo 27
Praia 27
San José 27
Skopje 27
Sofia 27
Tirana 27
Yerevan 27
Belize City 26
Cayenne 26
Totale 19.258
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.655
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 765
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 603
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 467
Accelerated testing of RF-MEMS contact degradation through radiation sources 248
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 234
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments 224
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 218
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 206
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 206
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 200
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 193
Neutron-Induced Upsets in NAND Floating Gate Memories 187
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 185
Destructive events in NAND Flash memories irradiated with heavy ions 183
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 180
1GigaRad TID impact on 28 nm HEP analog circuits 179
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 177
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 177
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 175
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 171
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 171
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 170
Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit 170
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 169
1GigaRad TID impact on 28nm HEP analog circuits 169
Error Instability in Floating Gate Flash Memories Exposed to TID 168
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 167
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 167
Proton induced trapping effect on space compatible GaN HEMTs 167
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 167
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 165
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 164
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 162
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 162
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 162
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 159
Neutron-induced soft errors in advanced Flash memories 158
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses 158
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 156
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 156
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 155
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 154
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 153
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 153
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 153
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 152
65 nm technology for HEP: Status and perspective 152
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 152
Single event gate rupture in 130-nm CMOS transistor arrays subjected to X-ray irradiation 151
TID sensitivity of NAND Flash memory building blocks 151
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 150
Radiation Effects in NAND Flash Memories 150
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 150
Radiation damage on dielectrics: Single event effects 149
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 149
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 148
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 148
Layout-Aware Multi-Cell Upsets Effects Analysis on TMR Circuits Implemented on SRAM-Based FPGAs 148
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 148
Total Ionizing Dose Effects in 3-D NAND Flash Memories 148
Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses 147
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 146
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 145
Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses 145
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 145
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 143
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 143
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 143
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 143
Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs 143
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs 142
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology 142
Developments on DC/DC converters for the LHC experiment upgrades 141
TID Sensitivity of NAND Flash Memory Building Blocks 141
Gate rupture in ultra-thin gate oxides irradiated with heavy ions 141
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 141
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 140
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 140
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 139
Impact of total dose on heavy-ion upsets in floating gate arrays 139
Single Event Effects in 90-nm Phase Change Memories 138
Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source 138
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC 137
On the static cross section of SRAM-based FPGAs 137
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses 137
Impact of radiation on the operation and reliability of deep submicron CMOS 136
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide 136
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 136
Atmospheric Neutron Soft Errors in 3D NAND Flash Memories 135
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 134
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 134
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications 134
DfT Reuse for Low-Cost Radiation Testing of SoCs: A Case Study 133
Evaluating Alpha-induced Soft Errors in Embedded Microprocessors 133
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 132
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 132
SEE tests of the NAND flash radiation tolerant intelligent memory stack 131
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 131
Layout-aware multi-cell upsets effects analysis on TMR circuits implemented on SRAM-based FPGAs 131
Totale 18.538
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Categoria #
all - tutte 90.083
article - articoli 59.356
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.035
Totale 150.474
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.722 0 0 0 0 89 165 157 260 363 178 314 196
2021/20223.209 67 295 675 168 145 106 166 383 147 77 352 628
2022/20231.818 369 52 72 189 299 206 78 150 176 25 116 86
2023/20241.049 80 148 110 90 68 71 40 35 38 140 124 105
2024/20256.167 2.022 431 150 159 518 150 167 336 270 187 749 1.028
2025/20267.967 541 1.656 2.558 3.070 142 0 0 0 0 0 0 0
Totale 30.719