MENEGHINI, MATTEO

MENEGHINI, MATTEO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 329 (tempo di esecuzione: 0.027 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
"Hot-plugging" of LED modules: Electrical characterization and device degradation 2013 DAL LAGO, MATTEOMENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 2021 Meneghini M.Meneghesso G.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 2009 MENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 2008 MENEGHINI, MATTEOTREVISANELLO, LORENZO ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 2009 MENEGHINI, MATTEOZANONI, ENRICO + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 2021 Gasparotto A.Barbato M.Meneghini M.Meneghesso G. + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 2020 Modolo, NicolaDe Santi, CarloMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires 2016 DE SANTI, CARLOMENEGHINI, MATTEOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
A review of the reliability of integrated ir laser diodes for silicon photonics 2021 Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 2010 MENEGHINI, MATTEOTAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A review on the reliability of GaN-based LEDs 2008 MENEGHINI, MATTEOTREVISANELLO, LORENZO ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Accelerated life test of high brightness light emitting diodes 2008 TREVISANELLO, LORENZO ROBERTOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 2015 LA GRASSA, MARCOMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 2013 ZANONI, ENRICOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
An analysis of the compositional techniques in John Chowning's Stria 2007 MENEGHINI, MATTEO COMPUTER MUSIC JOURNAL - -
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs 2023 Trivellin, NicolaBuffolo, MatteoDe Santi, CarloZanoni, EnricoMeneghesso, GaudenzioMeneghini, Matteo IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN INDUSTRIAL ELECTRONICS - -
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 2005 LEVADA, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -