RAMPAZZO, FABIANA

RAMPAZZO, FABIANA  

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Risultati 1 - 20 di 121 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs 2018 M. RzinF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 9th Wide Bandgap Semiconductor and Components workshop
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
A review of failure modes and mechanisms of GaN-based HEMT's 2007 ZANONI, ENRICOMENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCO + - - -
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 2010 ZANONI, ENRICOSTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANARONCHI, NICOLO'TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - 5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs 2007 RAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Analysis of hot carrier aging degradation in GaN MESFETs 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAPACETTA, DOMENICOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 2023 Francesco De PieriMirko FornasierZhan GaoFabiana RampazzoCarlo De SantiMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni - - Proceedings of ICNS-14
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 2007 DANESIN, FRANCESCARAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 2012 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 2014 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANACESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Solid State Device Research Conference (ESSDERC), 2014 44th European
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature 2021 Chiocchetta F.De Santi C.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. Of the 38th International Symposium on Compound Semiconductors – ISCS 2011
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 2013 ROSSETTO, ISABELLARAMPAZZO, FABIANASILVESTRI, RICCARDOZANANDREA, ALBERTOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 2012 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 21th European workshop on Heterostructure Technology, HeTech 2012
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs 2006 MENEGHESSO, GAUDENZIORAMPAZZO, FABIANAZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 2011 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOZANONI, ENRICOBISI, DAVIDEMENEGHESSO, GAUDENZIO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 2022 Gao Z.Chiocchetta F.De Santi C.Modolo N.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of 2022 IEEE International Reliability Physics Symposium (IRPS)
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)