RAMPAZZO, FABIANA

RAMPAZZO, FABIANA  

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Risultati 1 - 20 di 39 (tempo di esecuzione: 0.039 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 2007 DANESIN, FRANCESCARAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature 2021 Chiocchetta F.De Santi C.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 2013 ROSSETTO, ISABELLARAMPAZZO, FABIANASILVESTRI, RICCARDOZANANDREA, ALBERTOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs 2006 MENEGHESSO, GAUDENZIORAMPAZZO, FABIANAZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 2006 DANESIN, FRANCESCAZANON, FRANCOGERARDIN, SIMONERAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICOPACCAGNELLA, ALESSANDRO MICROELECTRONICS RELIABILITY - -
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 2020 Gao Z.Rampazzo F.Meneghini M.De Santi C.Chiocchetta F.Marcon D.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 2015 ROSSETTO, ISABELLAMENEGHINI, MATTEOBARBATO, MARCORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Developments on DC/DC converters for the LHC experiment upgrades 2014 GERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROF. RampazzoSPIAZZI, GIORGIOZANONI, ENRICO + JOURNAL OF INSTRUMENTATION - -
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 2023 Gao, ZhanDe Santi, CarloRampazzo, FabianaSaro, MarcoFornasier, MirkoMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 2013 MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOCIBIN, GIULIAZANONI, ENRICOMENEGHESSO, GAUDENZIO + JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES - -
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results 2022 Zanoni, ERampazzo, FDe Santi, CGao, ZMeneghesso, GMeneghini, M + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 2014 STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon 2020 De Santi C.Rampazzo F.Meneghini M.Zanoni E.Meneghesso G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot carrier aging degradation phenomena in GaN based MESFETs 2004 RAMPAZZO, FABIANAPIEROBON, ROBERTOPACETTA, DOMENICOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 2022 D. FaveroC. De SantiK. MukherjeeF. RampazzoG. MeneghessoE. ZanoniM. Meneghini + MICROELECTRONICS RELIABILITY - -
Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: a temperature-dependent analysis 2023 Pilati, M.Buffolo, M.Rampazzo, F.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 2015 ROSSETTO, ISABELLARAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOBAGATIN, MARTAZANANDREA, ALBERTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + SOLID-STATE ELECTRONICS - -