RAMPAZZO, FABIANA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 5.852
EU - Europa 820
AS - Asia 478
Continente sconosciuto - Info sul continente non disponibili 9
SA - Sud America 2
Totale 7.161
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 5.841
CN - Cina 343
IT - Italia 263
FI - Finlandia 147
DE - Germania 119
UA - Ucraina 87
SE - Svezia 66
GB - Regno Unito 54
IN - India 35
TW - Taiwan 29
VN - Vietnam 21
IE - Irlanda 16
RU - Federazione Russa 14
JP - Giappone 13
ID - Indonesia 12
NL - Olanda 11
BE - Belgio 10
KR - Corea 9
EU - Europa 8
FR - Francia 8
GR - Grecia 8
CH - Svizzera 7
MX - Messico 6
CA - Canada 5
AT - Austria 4
HK - Hong Kong 4
SG - Singapore 4
TR - Turchia 4
IL - Israele 3
BR - Brasile 2
DK - Danimarca 2
A2 - ???statistics.table.value.countryCode.A2??? 1
HR - Croazia 1
KZ - Kazakistan 1
NO - Norvegia 1
PL - Polonia 1
RO - Romania 1
Totale 7.161
Salva come PNG Salva come JPEG
Città #
Fairfield 798
Woodbridge 764
Houston 530
Ann Arbor 509
Ashburn 499
Chandler 378
Seattle 371
Jacksonville 360
Wilmington 323
Cambridge 272
Beijing 135
Princeton 111
Padova 98
Des Moines 96
Medford 89
San Diego 67
Nanjing 66
Helsinki 63
Boardman 54
Roxbury 35
Guangzhou 28
New York 24
Shenyang 22
Washington 22
Dong Ket 21
Dublin 16
Hebei 14
Redwood City 14
Norwalk 13
Hsinchu 12
Jiaxing 12
London 12
Nanchang 12
Changsha 11
Mestre 10
Modena 10
Kharkiv 9
Indiana 8
Patna 8
Tokyo 8
Chennai 7
Munich 7
Taipei 7
Basel 6
Lappeenranta 6
Nijmegen 6
Taichung 6
Ciudad Nezahualcoyotl 5
Delhi 5
Galliate Lombardo 5
Jinan 5
Ogden 5
Shanghai 5
Tianjin 5
Tomsk 5
Turin 5
Agordo 4
Borås 4
Brussels 4
Falls Church 4
Hounslow 4
Kanpur 4
Kilburn 4
Leuven 4
Los Angeles 4
Ningbo 4
Sarcedo 4
Yenibosna 4
Zhengzhou 4
Azzano Decimo 3
Bandung 3
Chicago 3
Haifa 3
Hefei 3
Hwaseong-si 3
Islington 3
Leawood 3
Ma On Shan 3
New Bedfont 3
Nürnberg 3
Odawara 3
Parma 3
San Francisco 3
Toulouse 3
Venice 3
Villach 3
Yangmei District 3
Belluno 2
Bengaluru 2
Bologna 2
Dongguan 2
Falkenstein 2
Farra di Soligo 2
Frankfurt am Main 2
Fremont 2
Hangzhou 2
Heraklion 2
Karlsruhe 2
Legnago 2
Magdeburg 2
Totale 6.126
Salva come PNG Salva come JPEG
Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 169
A review of failure modes and mechanisms of GaN-based HEMT's 168
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 155
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 152
Analysis of hot carrier aging degradation in GaN MESFETs 151
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 146
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 145
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 136
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 136
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 128
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 123
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 113
Hot carrier aging degradation phenomena in GaN based MESFETs 110
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate 109
Degradation physics of GaN-based lateral and vertical devices 109
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 108
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 108
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs 106
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 101
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 100
Proton induced trapping effect on space compatible GaN HEMTs 98
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 97
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 93
Developments on DC/DC converters for the LHC experiment upgrades 93
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 91
Reliability and failure analysis in power GaN-HEMTs: An overview 91
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 86
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 81
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 81
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 80
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 79
Field-dependent degradation mechanisms in GaN-based HEMTs 79
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs 78
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 78
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 75
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 74
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 74
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 71
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 69
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 69
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 68
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 68
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors 65
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 64
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 63
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 61
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 60
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 60
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 60
Degradation of GaN HEMT at high drain voltages 59
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 59
Failure mechanisms of GaN-based transistors in on- and off-state 58
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 56
Reliability analysis of GaN-Based LEDs for solid state illumination 55
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 55
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 54
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 53
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 53
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 53
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 53
Reliability improvement of AlGaN/GaN HEMTs for space applications 52
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 52
Light emission in GaN HEMTs: a powerful characterization and reliability tool 51
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs 50
Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs 49
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 49
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 49
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 47
Reliability aspects of GaN microwave devices 46
Trap related instabilities and localized damages induced by reverse bias” 46
Instabilities and degradation in GaN-based devices 46
On the investigation of ESD Failure mechanisms in AlGaN/GaN RF HEMTs 46
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion 46
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 46
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 45
Reliability aspects of GaN microwave devices 45
Gallium Nitride power devices: challenges and perspectives 45
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 43
Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs 43
Time dependent Degradation of AlGaN/GaN HEMTs 43
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 39
Challenges towards highly reliable GaN power transistors 38
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 37
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 36
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling 36
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 34
Novel models for the analysis of the dynamic performance of wide bandgap devices 32
Study of High-Field Degradation Phenomena in GaN-capped AlGaN/GaN HEMTs 31
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs 30
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs 29
Reliability analysis of Gan-Based LEDs for solid state illumination 28
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 27
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 27
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon 27
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 26
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 25
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 23
Review on the degradation of GaN-based lateral power transistors 22
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs 22
Totale 7.033
Salva come PNG Salva come JPEG
Categoria #
all - tutte 25.300
article - articoli 9.244
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.544
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019322 0 0 0 0 0 0 0 0 0 0 167 155
2019/20201.693 195 38 8 395 138 117 93 165 166 205 112 61
2020/20211.033 47 71 55 87 41 82 75 165 120 85 114 91
2021/20221.008 21 174 122 62 29 47 50 111 42 20 106 224
2022/2023993 157 24 27 78 195 202 12 75 140 3 51 29
2023/2024697 69 109 88 49 60 152 60 39 31 36 4 0
Totale 7.227