RAMPAZZO, FABIANA
 Distribuzione geografica
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Continente #
NA - Nord America 10.718
AS - Asia 6.505
EU - Europa 3.043
AF - Africa 1.014
SA - Sud America 883
OC - Oceania 77
Continente sconosciuto - Info sul continente non disponibili 64
Totale 22.304
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Nazione #
US - Stati Uniti d'America 10.168
SG - Singapore 2.130
CN - Cina 1.264
VN - Vietnam 1.037
IT - Italia 593
BR - Brasile 482
HK - Hong Kong 457
PL - Polonia 288
DE - Germania 278
IN - India 264
FR - Francia 261
FI - Finlandia 233
GB - Regno Unito 164
BD - Bangladesh 124
UA - Ucraina 124
RU - Federazione Russa 107
SE - Svezia 105
JP - Giappone 103
AR - Argentina 90
TR - Turchia 87
CA - Canada 83
BJ - Benin 77
IQ - Iraq 75
TW - Taiwan 74
NL - Olanda 70
ES - Italia 67
MX - Messico 59
ID - Indonesia 58
AT - Austria 55
PH - Filippine 54
PK - Pakistan 54
KR - Corea 52
UZ - Uzbekistan 51
IE - Irlanda 50
EC - Ecuador 48
SA - Arabia Saudita 46
ZA - Sudafrica 45
CO - Colombia 43
BE - Belgio 42
CH - Svizzera 42
EG - Egitto 37
JO - Giordania 37
VE - Venezuela 37
CL - Cile 36
ET - Etiopia 35
GR - Grecia 35
CZ - Repubblica Ceca 34
UY - Uruguay 34
MA - Marocco 33
MK - Macedonia 33
AO - Angola 32
BO - Bolivia 32
PA - Panama 32
TJ - Tagikistan 32
XK - ???statistics.table.value.countryCode.XK??? 32
DZ - Algeria 31
MY - Malesia 31
PE - Perù 31
CI - Costa d'Avorio 30
CR - Costa Rica 30
GA - Gabon 30
HN - Honduras 30
JM - Giamaica 30
KZ - Kazakistan 30
NP - Nepal 30
RS - Serbia 30
SK - Slovacchia (Repubblica Slovacca) 30
TN - Tunisia 30
MZ - Mozambico 29
PY - Paraguay 29
PS - Palestinian Territory 28
AZ - Azerbaigian 27
KE - Kenya 27
LB - Libano 27
PT - Portogallo 27
TH - Thailandia 27
AU - Australia 26
BW - Botswana 26
CM - Camerun 26
GE - Georgia 26
IL - Israele 26
IR - Iran 26
LC - Santa Lucia 26
MN - Mongolia 26
RO - Romania 26
AE - Emirati Arabi Uniti 25
AL - Albania 25
BF - Burkina Faso 25
EE - Estonia 25
BB - Barbados 24
CV - Capo Verde 24
DO - Repubblica Dominicana 24
GN - Guinea 24
ML - Mali 24
NI - Nicaragua 24
ZW - Zimbabwe 24
BG - Bulgaria 23
CW - ???statistics.table.value.countryCode.CW??? 23
IS - Islanda 23
LU - Lussemburgo 23
Totale 21.223
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Città #
Ashburn 1.485
San Jose 1.322
Singapore 1.246
Fairfield 798
Woodbridge 764
Houston 546
Ann Arbor 509
Hong Kong 419
Santa Clara 405
Chandler 378
Seattle 375
Jacksonville 361
Wilmington 328
Ho Chi Minh City 311
Beijing 289
Cambridge 279
Hanoi 247
Bytom 226
Boardman 181
Los Angeles 158
Padova 152
Lauterbourg 116
Princeton 111
New York 110
Helsinki 101
Des Moines 97
Medford 89
Cotonou 74
Da Nang 72
Munich 68
San Diego 68
Nanjing 66
Bengaluru 65
Chicago 65
Tokyo 58
Guangzhou 52
São Paulo 51
Buffalo 50
Padua 49
Haiphong 46
Chennai 45
Tashkent 44
Warsaw 43
Hefei 42
Dublin 40
Orem 40
Denver 37
Roxbury 35
Amman 33
Dallas 33
Montreal 33
London 32
Abidjan 30
Addis Ababa 30
Dushanbe 30
Vienna 30
Turku 29
Libreville 28
Panama City 28
Rome 28
Brooklyn 27
Frankfurt am Main 27
Luanda 27
Castries 26
Milan 26
Montevideo 26
Shenyang 26
Ulan Bator 26
Atlanta 25
Nairobi 25
Baghdad 24
San José 24
Washington 24
Baku 23
Conakry 23
Dakar 23
Managua 23
Taipei 23
Bamako 22
Bridgetown 22
Harare 22
Maputo 22
Shanghai 22
Stockholm 22
Biên Hòa 21
Dong Ket 21
Kingston 21
Pristina 21
Skopje 21
Amsterdam 20
Gaborone 20
Jeddah 20
Kigali 20
Nassau 20
Nouakchott 20
Nuremberg 20
Paris 20
Phnom Penh 20
Redondo Beach 20
Tbilisi 20
Totale 13.782
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 297
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 282
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 282
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 273
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 270
Analysis of hot carrier aging degradation in GaN MESFETs 265
A review of failure modes and mechanisms of GaN-based HEMT's 262
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 250
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 250
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 mu m AlGaN/GaN HEMTs 249
Degradation physics of GaN-based lateral and vertical devices 245
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 244
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 241
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 238
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 233
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 231
Proton induced trapping effect on space compatible GaN HEMTs 230
Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics 226
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 226
Hot carrier aging degradation phenomena in GaN based MESFETs 220
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 216
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 212
Reliability and failure analysis in power GaN-HEMTs: An overview 210
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 209
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 205
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 205
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 202
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs 202
Field-dependent degradation mechanisms in GaN-based HEMTs 197
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 195
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs 194
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 194
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 193
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 192
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 191
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 191
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 187
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 185
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 184
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 181
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 181
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion 180
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 178
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 178
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 177
Developments on DC/DC converters for the LHC experiment upgrades 177
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 176
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate 176
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 176
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 173
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 172
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 171
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 170
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 169
Light emission in GaN HEMTs: a powerful characterization and reliability tool 169
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 168
Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs 167
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 167
Scaling of GaN HEMTs for microwave and millimeter-wave applications: achieving control of short-channel effects, deep levels and reliability 166
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 163
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 163
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 163
Review on the degradation of GaN-based lateral power transistors 161
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 161
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 161
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 160
Degradation of GaN HEMT at high drain voltages 159
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 158
Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells 157
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 156
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs 156
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 156
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 156
Failure mechanisms of GaN-based transistors in on- and off-state 155
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 155
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 154
Gallium Nitride power devices: challenges and perspectives 153
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling 152
Microstructural Degradation Investigations of OFF-State Stressed 0.15 um RF AlGaN/GaN HEMTs: Failure Mode related Breakdown 150
Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: a temperature-dependent analysis 146
Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs 146
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 146
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 145
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 145
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 145
Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs 144
Reliability aspects of GaN microwave devices 143
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 143
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs 143
Novel models for the analysis of the dynamic performance of wide bandgap devices 142
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs 142
Reliability analysis of GaN-Based LEDs for solid state illumination 141
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 140
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates 138
Time dependent Degradation of AlGaN/GaN HEMTs 138
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 137
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 136
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 136
Instabilities and degradation in GaN-based devices 136
Reliability improvement of AlGaN/GaN HEMTs for space applications 135
Totale 18.366
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Categoria #
all - tutte 63.103
article - articoli 22.447
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 85.550
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202191 0 0 0 0 0 0 0 0 0 0 0 91
2021/20221.008 21 174 122 62 29 47 50 111 42 20 106 224
2022/2023993 157 24 27 78 195 202 12 75 140 3 51 29
2023/2024832 69 109 88 49 60 152 60 39 31 36 61 78
2024/20253.148 11 191 135 170 434 224 139 319 161 76 556 732
2025/202611.884 575 893 1.505 1.643 1.439 528 1.664 1.204 1.121 738 556 18
Totale 22.394